Double-Structure Substrates Using Non-Mono-Crystalline Layers
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Solution Overview
Problem
The high cost and complexity of manufacturing double-structure substrates with buried mono-crystalline semi-conducting layers limit their economical use in low-cost consumer devices, such as mobile phones and PDAs, due to the need for sequential layer-transfer operations.
Innovation Solution
The use of a buried non-mono-crystalline semi-conducting layer simplifies the manufacturing process and reduces costs by replacing the mono-crystalline layer with a non-mono-crystalline layer, which does not significantly impact device performance or power requirements, and involves a support, first and second insulating layers, and a top layer, with methods including assembly and thickness reduction of substrates.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If buried mono-crystalline semi-conducting layers are used in double-structure substrates, then device performance is improved, but manufacturing cost and complexity increase due to sequential layer-transfer operations
Solution Approach 1:
The patent changes the crystalline parameter of the buried semi-conducting layer from mono-crystalline to non-mono-crystalline (amorphous or poly-crystalline). This parameter change maintains the electrical functionality needed for back-gate operation while eliminating the need for complex sequential layer-transfer operations, thereby reducing manufacturing complexity and cost.
Solution Approach 2:
The patent replaces expensive mono-crystalline semi-conducting layers with cheaper non-mono-crystalline alternatives. The amorphous or poly-crystalline layers serve the same functional purpose as back-gate electrodes but at significantly lower manufacturing cost, making double-structure substrates economically viable for consumer devices.
2Manufacturing precision
If sequential layer-transfer operations are performed to manufacture double-structure substrates, then high quality crystalline layers are obtained, but manufacturing time and cost increase
Solution Approach 1:
The patent changes the material state parameter from requiring high-quality mono-crystalline structure to accepting amorphous or poly-crystalline structures. This allows the use of simpler, faster deposition techniques without sequential layer-transfer operations, thereby improving manufacturing efficiency while still achieving adequate layer quality for device functionality.
3Ease of manufacture
If non-mono-crystalline semi-conducting layers are used, then manufacturing cost is reduced, but device performance may be compromised
Solution Approach 1:
The patent applies local quality by differentiating the crystalline requirements for different layers. The top semi-conducting layer maintains high crystalline quality for optimal device performance, while the buried semi-conducting layer uses cost-effective non-mono-crystalline material that only needs to provide basic electrical functionality for back-gate control. This localized differentiation resolves the contradiction between cost and performance.
Data Source
AI summary
In preferred embodiments, the invention provides substrates that include a support, a first insulating layer arranged on the support, a non-mono-crystalline semi-conducting layer arranged on the first insulating layer, a second insulating layer arranged on the non-mono-crystalline semi-conducting layer; and top layer disposed on the second insulating layer. Additionally, a first gate electrode can be formed on the top layer and a second gate electrode can be formed in the non-mono-crystalline semi-conducting layer. The invention also provides methods for manufacture of such substrates.