Double TSV Structure Isolating Signal Paths for 3D Packaging
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Solution Overview
Problem
Conventional Through-Silicon Via (TSV) structures are prone to defects such as short circuits and open circuits due to shared nodes, leading to signal attenuation and current leakage, which affects the reliability and efficiency of 3D stack packages, particularly in applications like handheld electronic devices.
Innovation Solution
A double through silicon via structure is designed with separate signal paths and VDD isolation, utilizing inverters, switches, and voltage keepers to prevent signal degradation and stabilize signal transmission, allowing for independent operation of TSV units and reducing the risk of short and open circuits.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If multiple TSVs are coupled through the same node and driving circuit, then the structure is simple and manufacturing is easier, but short circuit defects in one TSV will affect other TSVs causing signal attenuation or restriction to 0
Solution Approach 1:
The patent divides the signal transmission system into multiple independent signal paths, each with its own driving circuit and TSV. This segmentation ensures that a short circuit in one TSV does not affect other TSVs, as each path operates independently. The receiving circuit combines signals from multiple paths, maintaining functionality even when individual paths fail.
2Reliability
If TSVs share common nodes and driving circuits, then the device complexity is reduced, but open circuit defects occur more frequently due to damages during bonding process
Solution Approach 1:
The patent implements separate driving circuits for each TSV, isolating them from common nodes that could propagate open circuit defects. This segmentation allows each TSV to be independently controlled and tested, improving tolerance towards open circuit defects caused by bonding process damages.
Solution Approach 2:
The patent applies different circuit configurations to different TSV paths, with each path having its own driving circuit and signal path. This local differentiation allows for customized protection and control strategies for each TSV, improving overall reliability without requiring complete system redesign.
3Reliability
If separate signal paths with independent driving circuits are used for each TSV, then tolerance towards short and open circuit defects is improved, but the device complexity and manufacturing difficulty increase
Solution Approach 1:
The patent uses universal receiving circuits that can process signals from multiple independent signal paths. The receiving circuit is designed to combine signals from different paths and handle various defect conditions, providing multi-functionality that simplifies the overall manufacturing process despite the increased number of signal paths.
Solution Approach 2:
The patent employs multiple copies of the driving circuit and signal path structure, each identical but independently functioning. This copying approach allows for standardized manufacturing processes where the same circuit design can be replicated across multiple TSV paths, reducing the actual manufacturing complexity despite the increased device complexity.
Data Source
AI summary
This invention discloses a double Through Silicon Via (TSV) structure, including a first die unit, a first signal path, a second signal path, a receiving unit and a second die unit. The first and the second signal paths respectively include a driving unit and a TSV unit. Each driving unit includes a first end, a second end and a third end. The invention divides the signal paths of the conventional double TSV into two different signal paths by two driving units and the receiving unit having OR gate or NOR gate, to avoid generating the problem of signal degradation from the TSV unit with short defect. The invention further disposes a first switch unit, a second switch unit, a first exchange unit, a second exchange unit, a first VDD keeper and a second VDD keeper, to avoid generating the problems of open defect and leakage current.