Double-Write Controller for NAND Memory Error Suppression

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Solution Overview

Problem

Nonvolatile memory devices, such as NAND-type flash memory devices, face reliability degradation due to cell-to-cell interference and high error rates when using multi-level cell techniques and advanced process techniques, leading to increased write errors and reduced endurance.

Innovation Solution

A semiconductor system with a write buffer and a controller that performs a double-write operation, writing data into a memory circuit under specific conditions to reduce error rates and maintain performance, utilizing error correction codes and multiple write routes to manage data storage and retrieval efficiently.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a double-write operation is performed to suppress write errors, then reliability is improved, but the number of accesses to memory cells increases causing degradation of endurance

Engineering Contradiction:
Improvewrite error suppressionVSAvoidendurance
Core Design Contradiction:
ReliabilityVSDuration of action of stationary object

Solution Approach 1:

A write buffer is introduced as an intermediary component between the host and the memory circuit. The buffer temporarily stores write data and allows the controller to manage double-write operations selectively based on buffer status, thereby reducing direct access frequency to memory cells while maintaining error suppression capabilities

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

Write data is preliminarily stored in the write buffer before being written to the memory circuit. This preliminary action allows the controller to evaluate buffer conditions and determine whether double-write is necessary, preventing unnecessary repeated accesses to memory cells and preserving endurance

Inventive Principle:
Principle #10Preliminary action

2Quantity of substance

If multi-level cell techniques are used to increase integration density, then the number of bits per cell increases, but cell-to-cell interference occurs degrading reliability

Engineering Contradiction:
Improveintegration densityVSAvoidcell-to-cell interference
Core Design Contradiction:
Quantity of substanceVSReliability

Solution Approach 1:

The write operation is segmented into multiple independent stages: data reception, buffer storage, error correction encoding, conditional double-write execution, and memory programming. This segmentation allows selective application of double-write only when buffer conditions warrant it, mitigating the reliability degradation caused by MLC cell-to-cell interference

Inventive Principle:
Principle #1Segmentation

3Length of moving object

If advanced process techniques are used to reduce minimum feature size, then integration density increases, but data errors occur more easily

Engineering Contradiction:
Improveminimum feature sizeVSAvoiddata error rate
Core Design Contradiction:
Length of moving objectVSReliability

Solution Approach 1:

The controller implements feedback mechanisms by monitoring write buffer status and error conditions. Based on this feedback, the controller dynamically adjusts whether to perform double-write operations, creating a closed-loop system that adapts to actual error conditions rather than applying double-write universally, thus maintaining reliability without excessive wear

Inventive Principle:
Principle #23Feedback

Data Source

PatentUS10186302B2Semiconductor systems performing double-write operations and methods of operating the same
Publication Date: 2019.01.22 SK HYNIX INC
  • US10186302B2 patent drawing
  • US10186302B2 patent drawing
  • US10186302B2 patent drawing

AI summary

A semiconductor system includes a controller. The controller is configured to have a write buffer that stores first write data outputted from a host before the first write data is written into a memory circuit. The controller is configured to write the first write data stored in the write buffer into the memory circuit under a first condition and configured to double-write the first write data stored in the write buffer into the memory circuit under a second condition.