DRAM Memory Device Void Gate Structure Reducing Leakage
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
As transistor sizes in DRAM devices decrease, voltage differences between active regions lead to electrical potential coupling, causing increased gate-induced drain leakage (GIDL) and degrading device performance.
Innovation Solution
A memory device with a void above a gate structure is introduced, using a capping layer to define this void between active regions, which reduces electrical potential coupling and improves performance by using a low dielectric constant material, such as a vacuum or gaseous material with a dielectric constant of about 1, instead of traditional dielectric materials.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If transistor size is reduced to increase component density, then component density is improved, but device performance deteriorates due to increased GIDL and electrical potential coupling
Solution Approach 1:
The patent applies different dielectric constant values at different locations: high-k dielectric material (k>3.9) is used in the gate electrode to enhance gate control, while low-k dielectric material (k<3.9) is used in the interlayer insulating film to reduce electrical potential coupling between adjacent transistors. This local differentiation of material properties resolves the contradiction by allowing high component density through reduced coupling while maintaining device performance through enhanced gate control.
2Ease of manufacture
If traditional dielectric materials are used between active regions, then manufacturing is simplified, but electrical potential coupling increases causing GIDL and performance degradation
Solution Approach 1:
The patent changes the dielectric constant parameter of the interlayer insulating film from traditional high-k materials to low-k materials (k<3.9). This parameter change reduces electrical potential coupling between active regions, thereby reducing GIDL and improving device performance while maintaining manufacturing feasibility through established low-k material deposition techniques.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively reduces electrical potential coupling, enhances stress relaxation, and improves the overall performance of the memory device by minimizing leakage current and GIDL issues.
Implementation Method 1
the void contains a gaseous material. the gaseous material has a dielectric constant of about 1
Data Source
AI summary
A memory device and a method for fabricating the same are provided. The memory device includes a substrate, a first active region, a second active region, a gate structure, and a capping layer. The first active region and the second active region are alternately disposed in the substrate. The gate structure is disposed in the substrate and between the first active region and the second active region. The capping layer is over the gate structure to define a void therebetween.