DRAM Structure With Conducting Strap For Leakage Control
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Solution Overview
Problem
Conventional DRAM structures face increased resistance and current leakage due to the shrinking size of single-sided buried straps, leading to high electronic fields and control issues.
Innovation Solution
A DRAM structure with a conducting strap connecting the trench capacitor to the drain region, replacing the traditional single-sided buried strap, and incorporating a buried word line to reduce resistance and prevent current leakage, while increasing integration and contact area.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If the size of single-sided buried strap is decreased to match DRAM scaling, then device size is reduced, but resistance increases
Solution Approach 1:
The patent transitions from a planar single-sided buried strap to a three-dimensional conducting strap structure that extends vertically and horizontally. The conducting strap is formed as a multi-layer structure with conductive plugs extending from the capacitor bottom electrode through the trench, providing additional conduction paths in the vertical dimension while maintaining reduced lateral footprint.
2Volume of moving object
If the size of single-sided buried strap is decreased, then device size is reduced, but current leakage increases
Solution Approach 1:
The patent introduces an intermediary conducting strap structure that mediates between the capacitor bottom electrode and the drain region. This conducting strap acts as a controlled intermediate connection point, allowing proper electrical connection while the surrounding insulating structures prevent unwanted current leakage paths.
3Volume of moving object
If single-sided buried strap size is decreased, then device size is reduced, but high electronic field occurs around junction causing control problems
Solution Approach 1:
The patent applies local quality by creating different structural characteristics at different locations. The conducting strap provides enhanced conduction where needed, while insulating structures are placed strategically around the strap junctions to control electric field distribution. This localized structural differentiation allows proper control while maintaining scaled dimensions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces resistance, prevents current leakage, and enhances control by integrating elements deeper within the substrate, allowing for smaller DRAM sizes with improved performance.
Implementation Method 1
a conducting strap formed on a portion of the top surface of the substrate to electrically connect the trench capacitor to the drain region
Data Source
AI summary
A DRAM structure has a substrate, a buried transistor with a fin structure, a trench capacitor, and a surface strap on the surface of the substrate. The surface strap is used to electrically connect a drain region to the trench capacitor.