DRAM Capacitor Array Layout With Dummy Capacitors for Structural Reliability
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Solution Overview
Problem
Current DRAM cells with recessed gate structures face structural defects due to increased cell-density, necessitating improvements for better performance and reliability.
Innovation Solution
A semiconductor device is designed with dummy capacitors arranged around the storage cell array, where top electrode layers, capacitor dielectric layers, and/or top electrode layers are in physical contact to balance elemental density, thereby improving structural reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If cell-density is continuously increased to meet miniaturization requirements, then integration density is improved, but structural defects increase due to manufacturing limitations
Solution Approach 1:
The invention changes the physical state and arrangement parameters of capacitors by transitioning from fully separated individual capacitor structures to physically contacting capacitor structures. This parameter change in structural arrangement allows the device to maintain manufacturing reliability while achieving higher integration density, effectively resolving the contradiction between increasing cell-density and maintaining structural reliability
2Reliability
If recessed gate structures are used to increase carrier channel length, then current leakage is reduced, but manufacturing defects persist due to processing technology limitations
Solution Approach 1:
The invention segments the capacitor structure into distinct functional regions (bottom electrode, capacitor dielectric layer, top electrode) that can be independently formed and controlled. This segmentation allows each layer to be optimized separately, maintaining the benefits of recessed gate structures for current leakage control while reducing the cumulative manufacturing defects associated with complex integrated structures
Data Source
AI summary
The present disclosure includes a substrate and a capacitor structure. The substrate includes a periphery region. The capacitor structure is disposed on the substrate and includes a plurality of capacitors arranged in an array, wherein at least two capacitors physically contact with each other along a direction being horizontal to the substrate. Through these arrangements, the semiconductor device enables to improve the possible structural defects of the semiconductor device caused by continuously increased cell-density, by arranging the dummy capacitors around the cell array, so as to obtain a more stable and more reliable structure to achieve better functions and performances.