DRAM Capacitor Electrode Doping for Higher Capacitance
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Solution Overview
Problem
Current semiconductor devices face challenges in increasing capacitance for improved refresh characteristics and yield, particularly in DRAM devices, where existing methods are inadequate in enhancing the interface between the lower electrode and the capacitor dielectric film to achieve higher charge storage and reliability.
Innovation Solution
The semiconductor device incorporates a lower electrode with a silicon dopant concentration gradient, where the dielectric film extends along specific regions of the electrode and supporter patterns, and an upper electrode is formed on the dielectric film, optimizing the interface engineering to enhance capacitance and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the contact area between the lower electrode and dielectric film is increased to improve capacitance, then the charge storage capacity improves, but the device complexity increases
Solution Approach 1:
The lower electrode is divided into an inner part and an outer part with different silicon dopant concentrations. The outer part has a higher silicon dopant concentration than the inner part, creating local quality variations that optimize the interface with the dielectric film while maintaining manageable device complexity.
Solution Approach 2:
The silicon dopant concentration is varied across different regions of the lower electrode. Specifically, the outer part has a higher silicon dopant concentration than the inner part, which changes the electrical and interface properties locally to enhance capacitance without requiring substantial increases in overall device complexity.
2Quantity of substance
If the dielectric film extends along more regions of the lower electrode to increase capacitance, then the charge storage improves, but the manufacturing precision requirements increase
Solution Approach 1:
The dielectric film is configured to extend along the outer part of the lower electrode but not along the inner part. This selective extension based on local quality differences (silicon dopant concentration) allows increased capacitance while maintaining clear manufacturing boundaries that reduce precision requirements.
3Reliability
If the silicon dopant concentration in the lower electrode is increased to improve interface engineering, then the reliability improves, but the manufacturing complexity increases
Solution Approach 1:
Different silicon dopant concentrations are applied to different regions of the lower electrode. The outer part has a higher silicon dopant concentration to improve interface reliability with the dielectric film, while the inner part maintains a lower concentration, avoiding uniform complexity throughout the entire device.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively increases the capacitance and improves the refresh characteristics and yield of semiconductor devices by optimizing the interface between the lower electrode and the dielectric film, leading to improved performance and reliability.
Implementation Method 1
The first region of the outer portion of the lower electrode includes a silicon (Si) dopant doped therein
Data Source
AI summary
Semiconductor device may include a landing pad and a lower electrode that is on and is connected to the landing pad and includes an outer portion and an inner portion inside the outer portion. The outer portion includes first and second regions. The semiconductor devices may also include a dielectric film on the first region of the outer portion on the lower electrode and an upper electrode on the dielectric film. The first region of the outer portion of the lower electrode may include a silicon (Si) dopant, the dielectric film does not extend along the second region of the outer portion. A concentration of the silicon dopant in the first region of the outer portion is different from a concentration of the silicon dopant in the second region of the outer portion and is higher than a concentration of the silicon dopant in the inner portion.