DRAM Capacitor Structure with Segmented Electrodes Against Collapse
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Solution Overview
Problem
The increasing integration and reduction of element size in dynamic random access memory (DRAM) lead to the collapse of capacitor structures, reducing the yield of semiconductor structures due to the difficulty in forming high-aspect-ratio capacitor holes and electrode layers.
Innovation Solution
A method involving the formation of first and second intermediate holes, where a first electrode layer fills the first intermediate holes, and a second dielectric layer is formed around the first electrode layer, enhancing the strength and volume of the electrode layer to prevent collapse and improve yield.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the element size is continuously reduced to increase integration, then the storage capacity is improved, but the capacitor structures are likely to collapse
Solution Approach 1:
The capacitor structure is divided into multiple segments: a first electrode layer segmented into plateaus at different heights, with dielectric layers interspersed between them. This segmentation allows each electrode segment to be supported independently, preventing overall collapse while maintaining high storage capacity through increased electrode surface area.
Solution Approach 2:
The patent employs a nested structure where dielectric layers are positioned between and around electrode plateaus at different heights. The support layer is nested within the capacitor structure to provide internal reinforcement. This nesting approach allows multiple functional layers to occupy overlapping spatial regions, maximizing storage capacity within the constrained volume while maintaining structural integrity.
2Quantity of substance
If high-aspect-ratio capacitor holes are formed to increase storage capacity, then the storage performance is improved, but the manufacturing difficulty increases
Solution Approach 1:
A support layer is formed within the capacitor holes before depositing the electrode layers. This preliminary action provides structural reinforcement that prevents collapse during subsequent high-aspect-ratio electrode formation processes, enabling the manufacturing of tall, narrow capacitor structures that would otherwise be impossible to produce.
Solution Approach 2:
The electrode structure transitions from a simple vertical column to a multi-level plateau structure with horizontal terraces at different heights. This dimensional complexity increases the effective electrode surface area within the same vertical footprint, thereby improving storage capacity without requiring proportionally deeper holes.
3Quantity of substance
If the electrode layer volume is increased to improve storage capacity, then the storage performance is improved, but the risk of collapse increases
Solution Approach 1:
The electrode layer is segmented into multiple plateaus at different heights rather than forming a single continuous mass. This segmentation distributes the structural load across multiple supported sections, preventing collapse while maintaining increased total electrode volume for higher storage capacity.
Solution Approach 2:
Dielectric layers serve as intermediary structures positioned between electrode plateaus and within capacitor holes. These dielectric intermediaries provide mechanical support to the electrode structure, distributing stresses and preventing collapse while allowing the electrode volume to be increased for improved storage capacity.
Data Source
AI summary
The present application provides a method for preparing a semiconductor structure and a semiconductor structure, relating to the technical field of semiconductors. The method for preparing a semiconductor structure includes: providing a base; forming a support layer having capacitor holes and electric contact structures; forming a first dielectric layer in the capacitor holes, the first dielectric layer surrounding first intermediate holes; forming a first electrode layer in the first intermediate holes, the first electrode layer filling the first intermediate holes; removing part of the support layer to form second intermediate holes; forming a second dielectric layer in the second intermediate holes, the first dielectric layer and the second dielectric layer forming a dielectric layer; and, forming a second electrode layer on the dielectric layer.