DRAM Directed Refresh Circuit for Row Hammer Protection

The patent applies preliminary anti-action by implementing a directed refresh management mechanism that proactively performs refresh operations on adjacent memory rows before row hammer attacks can cause data loss. The refresh indication circuit detects frequent activation patterns and triggers targeted refresh operations on susceptible adjacent rows, countering the harmful effect before it occurs.

The patent employs feedback mechanisms through the refresh indication circuit that monitors activation patterns of memory rows. When frequent activation is detected, the circuit generates control signals to trigger directed refresh operations on adjacent rows, creating a closed-loop system that adapts to access patterns and prevents data loss through continuous monitoring and response.

The patent applies segmentation by dividing the memory device into multiple memory blocks, each managed by its own refresh indication circuit. This modular approach allows independent refresh management for each block, reducing the complexity burden on any single circuit while maintaining comprehensive protection across the entire memory array.

The patent implements self-service through autonomous refresh indication circuits that automatically detect activation patterns and trigger directed refresh operations without external intervention. The circuits self-regulate the refresh process based on real-time monitoring of memory access patterns, eliminating the need for complex external control mechanisms.