Cylindrical Lower Electrode Structure for DRAM Stress Compensation
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Solution Overview
Problem
The challenge in semiconductor devices is to maintain the structural integrity and reduce physical deformation of data storage structures in DRAM, particularly with the increasing demand for smaller sizes and higher integration, where existing designs face stress-related issues affecting the reliability and performance of lower electrodes.
Innovation Solution
The semiconductor device incorporates a data storage structure with lower electrodes featuring a cylindrical shape, including a first electrode layer, an insertion layer with a metal oxide, and a second electrode layer, where the insertion layer has stress opposite to that of the electrode layers, preventing physical deformation by offsetting overall stress and ensuring structural stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the size of data storage structure is reduced to meet high integration demands, then device integration density is improved, but structural stability deteriorates causing collapse and bending of lower electrodes
Solution Approach 1:
The lower electrode is segmented into multiple layers including a first electrode layer, a first insertion layer, and a second electrode layer. This segmentation allows each layer to have specific functions - the electrode layers provide conductivity while the insertion layer provides stress compensation, resolving the contradiction between miniaturization and structural stability.
Solution Approach 2:
The lower electrode uses a composite structure combining different materials with complementary properties. The first electrode layer (e.g., tungsten) provides mechanical strength, while the first insertion layer (e.g., metal oxide) provides stress compensation. This composite approach maintains structural integrity in reduced-size devices.
2Area of stationary object
If the size of data storage structure is reduced, then device footprint is reduced, but manufacturing complexity increases due to additional layers
Solution Approach 1:
The formation of the first electrode layer and first insertion layer is merged into a single sequential process flow. The first insertion layer is formed to cover the first electrode layer, and then the second electrode layer is formed to cover both, creating a integrated multi-layer structure that reduces device footprint while managing manufacturing complexity through process integration.
3Stability of the object's composition
If opposite stress is applied to electrode layers to prevent deformation, then structural stability is improved, but device complexity increases
Solution Approach 1:
The stress parameter of the insertion layer is specifically controlled to have opposite polarity to the electrode layers. The first insertion layer has compressive stress while the first electrode layer has tensile stress, or vice versa. This parameter change compensates for stress-induced deformation in miniaturized devices without requiring complex external support structures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the electrical characteristics and reliability of the semiconductor device by preventing collapse and bending of lower electrodes, thereby maintaining the integrity of the data storage structure and improving performance.
Implementation Method 1
Each of the plurality of lower electrodes includes a first electrode layer having a cylindrical shape, a first insertion layer disposed on the first electrode layer and having a cylindrical shape, a second electrode layer disposed on the first insertion layer and extending to cover an upper end of the first electrode layer and an upper end of the first insertion layer. At least one of the first electrode layer and the second electrode layer has a first stress, and the first insertion layer has a second stress, different from the first stress.
Data Source
AI summary
A semiconductor device includes a substrate, lower electrodes on the substrate, a dielectric layer covering the lower electrodes, and an upper electrode covering the dielectric layer. Each of the lower electrodes includes a first electrode layer having a cylindrical shape, a first insertion layer disposed on the first electrode layer and having a cylindrical shape, a second electrode layer disposed on the first insertion layer and extending to cover an upper end of the first electrode layer and an upper end of the first insertion layer. At least one of the first electrode layer and the second electrode layer has a first stress, and the first insertion layer has a second stress, different from the first stress. The first stress is one of tensile stress and compressive stress, and the second stress is the other of the tensile stress and the compressive stress.