DRAM Gate Isolation Structure With Air Gap for Contact Plug Interference
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Solution Overview
Problem
The stability of transistors in current DRAM peripheral circuits is low due to reduced electrical isolation effects caused by shrinking feature sizes, leading to electrical contact or signal interference between the gate layer and contact plugs, affecting the structural stability and signal transmission in semiconductor structures.
Innovation Solution
A manufacturing method that forms isolation structures with a hollow portion and an isolation portion around the gate layer, creating an air gap to prevent electrical contact and improve electrical isolation, while maintaining the semiconductor structure's reduced feature size, thereby enhancing the stability and performance of the semiconductor structure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If feature size is reduced to improve integration density, then productivity increases, but electrical isolation between gate layer and contact plugs deteriorates causing signal interference
Solution Approach 1:
The isolation structure is segmented into multiple functional portions: a first isolation portion providing initial electrical isolation, a hollow portion creating an air gap for enhanced isolation, and a second isolation portion completing the isolation barrier. This segmentation allows each portion to contribute specifically to electrical isolation while accommodating the reduced feature size requirements for high integration density.
Solution Approach 2:
The hollow portion filled with air acts as an intermediary layer between the gate layer and contact plugs. This air gap serves as a dielectric medium that enhances electrical isolation by interrupting direct electrical paths and reducing parasitic capacitance, thereby preventing signal interference while maintaining compact dimensions for high-density integration.
2Productivity
If feature size is reduced to improve integration density, then productivity increases, but structural stability deteriorates making transistors more vulnerable to damage
Solution Approach 1:
The isolation structure is divided into multiple protective portions that collectively provide comprehensive structural support. The first isolation portion, hollow portion, and second isolation portion work together to form a robust isolation barrier that protects the gate layer and contact plugs from mechanical damage, enhancing structural stability despite reduced feature sizes required for high integration density.
Solution Approach 2:
The hollow portion filled with air acts as a cushioning layer that absorbs mechanical stress and protects the underlying gate layer and contact plugs from damage. This air gap provides a compliant buffer that prevents direct transmission of mechanical forces, thereby enhancing structural stability in the compact high-density transistor structure.
3Productivity
If feature size is reduced to improve integration density, then productivity increases, but electrical contact between gate layer and contact plugs occurs causing signal interference
Solution Approach 1:
The isolation structure is segmented into multiple portions that collectively block electrical contact paths. The first isolation portion, hollow portion, and second isolation portion create multiple barriers that prevent direct electrical contact between the gate layer and contact plugs, eliminating signal interference while maintaining the compact dimensions necessary for high integration density.
Solution Approach 2:
The hollow portion filled with air serves as an intermediary dielectric layer that prevents direct electrical contact between the gate layer and contact plugs. This air gap acts as an electrical barrier that blocks signal interference by interrupting capacitive coupling and direct conduction paths, thereby eliminating harmful electrical interactions in the high-density transistor structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method improves the structural stability and signal transmission in semiconductor structures by increasing the electrical isolation between the gate layer and contact plugs, reducing parasitic capacitance and preventing damage to the contact plugs, thus enhancing the working performance of DRAM devices.
Implementation Method 1
forming isolation structures on a periphery of the gate layer, wherein in a direction away from the gate layer, each of the isolation structures at least includes a hollow portion and an isolation portion
Implementation Method 2
each of the isolation structures at least includes a hollow portion and an isolation portion; the hollow portion is located on a side of the isolation portion close to the gate layer
Implementation Method 3
The structure and other objectives and beneficial effects of the present disclosure will be described in detail with reference to the drawings to make the preferred embodiments more obvious and understandable
Data Source
AI summary
The present disclosure provides a manufacturing method of a semiconductor structure and a semiconductor structure, and relates to the technical field of semiconductors. The manufacturing method includes: providing a base, wherein the base is provided with an active region; forming a gate layer on the base; forming isolation structures on a periphery of the gate layer, wherein in a direction away from the gate layer, each of the isolation structures at least includes a hollow portion and an isolation portion; forming an insulating structure on top surfaces of the isolation structures; forming contact plugs, wherein the contact plugs penetrate the insulating structure; an end of each of the contact plugs close to the base is electrically connected to the active region; each of the contact plugs is located on a side of each of the isolation structures away from the gate layer.