DRAM Plug and Capacitor Structure for Stress-Regulated Isolation
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing semiconductor structures face structural defects due to stress variations in the peripheral region, particularly in three-dimensional dynamic random access memory (DRAM) configurations with stacked capacitors, which affect the integrity of interconnecting structures.
Innovation Solution
The semiconductor structure incorporates plug structures on both the cell and peripheral regions with a recessed insulating structure to regulate stress and secure the end portion of interconnecting structures, ensuring they are formed in one piece with bit line contacts and adjacent plug structures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If plug structures are disposed on the peripheral region with complete insulating structure coverage, then electrical isolation is improved, but stress-induced structural defects occur due to stress variation between cell region and peripheral region
Solution Approach 1:
The insulating structure is selectively recessed in the peripheral region to create different structural configurations in different areas. Specifically, the insulating structure is recessed where it contacts isolated plug structures in the peripheral region, while maintaining complete coverage in other areas. This local modification allows stress regulation without compromising overall electrical isolation.
2Stability of the object's composition
If insulating structure is recessed to regulate stress, then stress-induced structural defects are reduced, but electrical isolation between plug structures may be compromised
Solution Approach 1:
The filling material layer is introduced as an intermediary substance to occupy the recessed portions of the insulating structure. This filling material maintains the physical presence and electrical isolation function in areas where the insulating structure is recessed, while still allowing stress regulation through the recessed geometry.
3Ease of manufacture
If interconnecting structure end portion is formed separately from bit line contact, then manufacturing flexibility is improved, but peeling occurs due to insufficient adhesion on peripheral region
Solution Approach 1:
The interconnecting structure end portion is merged with the bit line contact and adjacent plug structures to form an integrated, one-piece structure. This merging eliminates the separate interface that caused peeling, while the recessed insulating structure and filling material provide enhanced mechanical interlocking and adhesion in the peripheral region.
Data Source
AI summary
A semiconductor structure includes a substrate having a first region and a second region, an isolation structure in the second region, a plurality of plug structures disposed on the first region and the second region, an insulating structure between the plug structures, and a capacitor structure disposed on the plug structures on the first region. The plug structures include at least an isolated plug structure disposed on the isolation structure in the second region. A portion of the insulating structure on the isolated plug structure has a recess. A filling material layer fills in the recess, and a portion of the filling material layer and a portion of the capacitor structure are made of a same material.