DRAM Temperature Rate Monitoring for Super-Cooling Attack Detection

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Solution Overview

Problem

Existing memory devices are vulnerable to attacks, such as super-cooling, which allow unauthorized access to stored data by slowing down processing and enabling data extraction before secure measures can be implemented.

Innovation Solution

Detecting attacks through monitoring the rate of temperature change in memory devices, particularly DRAM, using sensors and thresholds to trigger protective actions like disabling features or discharging sensitive data to prevent data theft.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If temperature monitoring is added to detect attacks, then security against super-cooling attacks is improved, but device complexity increases

Engineering Contradiction:
ImprovesecurityVSAvoiddevice complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent combines temperature sensing functionality with the existing memory device structure by integrating temperature sensors within the memory device housing and merging the temperature monitoring function with the existing control logic. This integration approach adds security capabilities while minimizing the increase in device complexity through shared structural and control resources.

Inventive Principle:
Principle #5Merging (Combining)

2Difficulty of detecting and measuring

If temperature sensors and monitoring circuitry are integrated into the memory device, then detection capability against super-cooling attacks is improved, but manufacturing complexity increases

Engineering Contradiction:
Improvedetection capabilityVSAvoidmanufacturing complexity
Core Design Contradiction:
Difficulty of detecting and measuringVSEase of manufacture

Solution Approach 1:

The patent segments the temperature monitoring function into separate sensor modules that can be independently manufactured and then integrated with the memory device. This segmentation allows specialized temperature sensor fabrication processes to be performed separately from main memory device manufacturing, reducing overall manufacturing complexity while maintaining high detection capability.

Inventive Principle:
Principle #1Segmentation

3Reliability

If the memory device discharges data in response to detected super-cooling attacks, then data security is improved, but loss of information occurs

Engineering Contradiction:
Improvedata securityVSAvoiddata loss
Core Design Contradiction:
ReliabilityVSLoss of information

Solution Approach 1:

The patent implements preliminary anti-action by establishing predetermined discharge thresholds and criteria before attacks occur. When temperature changes indicate a super-cooling attack, the system automatically discharges data according to pre-established rules, preventing unauthorized access while minimizing unnecessary data loss through carefully calibrated threshold settings that distinguish attacks from normal operations.

Inventive Principle:
Principle #9Preliminary anti-action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Effectively prevents unauthorized data access by detecting and responding to super-cooling attacks, ensuring secure data retention and system integrity.

Implementation Method 1

A sensor at the DRAM component may be used to measure a plurality of temperature readings

Methodology Applied
Scientific EffectThermal energy detection:

Data Source

PatentUS12511378B2Temperature change measurement to detect attack
Publication Date: 2025.12.30 MICRON TECHNOLOGY INC
  • US12511378B2 patent drawing
  • US12511378B2 patent drawing
  • US12511378B2 patent drawing

AI summary

Methods, systems, and devices for temperature change measurement to detect an attack on a memory device are described. A memory device may measure a rate of change for temperature readings at a dynamic random access memory (DRAM) component of the memory device (e.g., using sensors at the DRAM component). The memory device may compare the rate of change for the temperature to a threshold, for example, using circuitry, a threshold value stored in memory, or both. If the memory device determines that the rate of change for the temperature satisfies the threshold, the memory device may disable one or more features of the memory device to protect against a potential attack. For example, an attack on the memory device may be indicated by the change in temperature readings at the DRAM component, and the memory device may perform one or more protective measures based on detecting the temperature change.