DRAM Temperature Rate Detection for Super-Cooling Attacks

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Solution Overview

Problem

Existing memory devices are vulnerable to attacks such as super-cooling, where an attacker freezes the memory to retain data and probe sensitive information, which current detection methods based on absolute temperature thresholds are ineffective.

Innovation Solution

Utilizing a temperature rate of change detection mechanism in memory devices to identify super-cooling attacks by monitoring and comparing the rate of temperature change against a threshold, triggering corrective actions such as disabling features or discharging sensitive data to prevent information theft.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional temperature threshold methods are used to detect attacks, then the detection system is simple, but the detection reliability is insufficient and cannot reliably detect super-cooling attacks

Engineering Contradiction:
Improveattack detection reliabilityVSAvoiddetection system complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent changes the detection parameter from absolute temperature threshold to temperature change rate (dT/dt). This allows the system to detect super-cooling attacks by identifying abnormal temperature变化 speeds, improving detection reliability while maintaining a relatively simple implementation approach through existing temperature sensors and basic calculation logic.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent replaces conventional mechanical/threshold-based detection methods with a rate-of-change based detection mechanism. Instead of comparing temperature against fixed thresholds, the system calculates the derivative of temperature over time, enabling more sophisticated attack detection without requiring complex hardware modifications.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

2Reliability

If the memory device disables features or discharges data in response to detected attacks, then data security is improved, but device functionality is reduced

Engineering Contradiction:
Improvedata securityVSAvoiddevice functionality
Core Design Contradiction:
ReliabilityVSEase of operation

Solution Approach 1:

The patent applies preliminary anti-action by pre-configuring protective responses (feature disabling, data discharge) that are automatically triggered when attacks are detected. This ensures data security is maintained while minimizing manual intervention, and the functions are restored after the threat is eliminated.

Inventive Principle:
Principle #9Preliminary anti-action

Solution Approach 2:

The patent implements dynamic functionality management where device features are temporarily disabled or data is discharged only when attack conditions are present. The system dynamically adjusts its operational state based on real-time threat detection, maintaining full functionality during normal operation while providing security protection when needed.

Inventive Principle:
Principle #15Dynamics

Data Source

PatentUS20260111543A1Temperature change measurement to detect attack
Publication Date: 2026.04.23 MICRON TECHNOLOGY INC
  • US20260111543A1 patent drawing
  • US20260111543A1 patent drawing
  • US20260111543A1 patent drawing

AI summary

Methods, systems, and devices for temperature change measurement to detect an attack on a memory device are described. A memory device may measure a rate of change for temperature readings at a dynamic random access memory (DRAM) component of the memory device (e.g., using sensors at the DRAM component). The memory device may compare the rate of change for the temperature to a threshold, for example, using circuitry, a threshold value stored in memory, or both. If the memory device determines that the rate of change for the temperature satisfies the threshold, the memory device may disable one or more features of the memory device to protect against a potential attack. For example, an attack on the memory device may be indicated by the change in temperature readings at the DRAM component, and the memory device may perform one or more protective measures based on detecting the temperature change.