Dynamic Comparison Circuit for Low-Power DRAM Voltage Sensing
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Solution Overview
Problem
Dynamic Random Access Memory (DRAM) comparison circuits face challenges in achieving high speed and low power consumption due to inefficiencies in voltage comparison, particularly with high power consumption and slow output speeds resulting from the use of error amplifiers and bias circuits in high voltage domains.
Innovation Solution
A comparison circuit comprising a comparison module, state judgment module, and state storage module, where the comparison module compares voltages and outputs results stored in the state storage module, controlled by a pulse generation circuit to reduce power consumption and enhance comparison speed, utilizing a dynamic comparator structure with transistors to expedite voltage comparison.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an error amplifier operating in a high voltage domain is adopted to build a comparison circuit, then the comparison function can be achieved, but the power consumption is large and the output speed is low
Solution Approach 1:
The patent changes the operating voltage domain from high voltage to low voltage by using a low-voltage comparison circuit. The circuit compares voltages in the low voltage domain (e.g., 1.8V) instead of requiring high voltage operation, thereby reducing power consumption while maintaining comparison functionality through modified circuit topology and transistor sizing
Solution Approach 2:
The patent removes the charge pump and bias circuit components from the comparison circuit. By extracting these high-power consumption elements, the circuit achieves voltage comparison functionality without requiring high voltage generation, thus eliminating the associated power consumption and complexity
2Reliability
If an error amplifier operating in a high voltage domain is adopted to build a comparison circuit, then the comparison function can be achieved, but the output speed is low
Solution Approach 1:
The patent changes the operating voltage domain and circuit parameters to optimize for speed. By using low-voltage transistors with appropriate sizing and a streamlined circuit topology without bias circuits, the comparison operation completes faster, improving output speed while maintaining reliable voltage comparison functionality
Solution Approach 2:
The patent removes bias circuits and other auxiliary components that slow down the comparison operation. By extracting these elements, the circuit achieves a more direct and faster voltage comparison path, improving output speed while maintaining the essential comparison function
3Temperature
If a charge pump is used to generate high voltages in the DRAM, then the high voltage domain operation is enabled, but the efficiency is low and power consumption is high
Solution Approach 1:
The patent changes the operating voltage parameter from high voltage to low voltage throughout the comparison circuit. By designing the circuit to operate natively in the low voltage domain using appropriately sized transistors and circuit topologies, the need for charge pumps is eliminated, thereby improving energy efficiency
Solution Approach 2:
The patent extracts and removes the charge pump from the system. By taking out this energy-inefficient voltage generation component, the circuit achieves high voltage domain functionality indirectly through signal level shifting or direct low-voltage operation, eliminating the energy loss associated with charge pump operation
Data Source
AI summary
A comparison circuit includes a comparison module, a state judgment module and a state storage module. The comparison module includes a first input end connected to a voltage to be measured and a second input end connected to a reference voltage. The state judgment module includes a first input end connected to a first output end of the comparison module and a second input end connected to a second output end of the comparison module. The state storage module includes an input end connected to the first output end of the comparison module and an enable end connected to an output end of the state judgment module. The embodiments of the disclosure may improve processing efficiency of the comparison circuit.