DRAM Wire Support Structure With Air Gaps for Low Parasitic Capacitance
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current semiconductor manufacturing technologies face challenges in achieving stable and high-performance wire structures with a high depth-to-width ratio, leading to structural instability and electrical performance issues in dynamic random access memory (DRAM) devices.
Innovation Solution
The semiconductor structure incorporates wire structures with isolation and support structures arranged at intervals, along with air gap structures between storage node contact structures and adjacent wires, to enhance structural stability and reduce parasitic capacitance, thereby improving electrical performance and yield.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If wire structures are arranged closely to increase storage density, then storage capacity is improved, but parasitic capacitance between adjacent structures increases
Solution Approach 1:
Air gap structures are introduced as intermediary elements between adjacent wire structures and storage node contact structures. These air gaps act as insulating mediators that physically separate conductive elements, reducing parasitic capacitance while allowing close spacing for high storage density. The air gap structures serve as the mediator that enables both high density and low capacitance.
Solution Approach 2:
The patent introduces vertical dimension solutions by extending support structures in directions intersecting with wire structures, and by forming air gap structures in three-dimensional space between components. This dimensional approach allows closer horizontal spacing while maintaining electrical isolation through vertical separation elements.
2Volume of moving object
If storage node contact structures are positioned closer to wires for compact design, then device size is reduced, but structural stability deteriorates
Solution Approach 1:
Support structures are extended in vertical and lateral directions intersecting with wire structures to provide three-dimensional structural reinforcement. This dimensional expansion creates a stable support network that maintains structural integrity even when storage node contact structures are positioned closely to wires for compact design.
Solution Approach 2:
The patent employs composite structural elements combining wire structures, isolation structures, support structures, and air gap structures into an integrated composite system. This composite approach provides both compact positioning capability and structural stability through the synergistic combination of multiple structural components.
3Object-generated harmful factors
If air gap structures are introduced to reduce parasitic capacitance, then electrical performance is improved, but manufacturing complexity increases
Solution Approach 1:
The air gap structures are merged with the existing wire and support structure formation processes. By combining the creation of air gaps with the deposition and patterning of support structures, the patent reduces manufacturing complexity compared to forming air gaps as separate discrete steps. The air gap structures are integrated into the overall fabrication sequence.
Data Source
AI summary
A semiconductor structure includes a substrate, wire structures, support structures and storage node contact structures. Each wire structure includes a wire and an isolation structure located on the wire. The wire structures extend along a first direction. The support structures are located on a side of the wire structures away from the substrate. The support structures are arranged at intervals in the first direction and connected with the isolation structures. The support structures extend along a second direction, and the second direction intersects with the first direction. The storage node contact structures are arranged in contact holes, and each of the contact holes is located within adjacent wire structures and adjacent support structures. A first air gap structure is provided between each of the storage node contact structures and a wire structure adjacent to the storage node contact structure.