DRAM Word Line Protection Circuit for Row Hammer Refresh

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Dynamic random access memory (DRAM) systems are vulnerable to the row hammer effect, where repeated access to specific memory rows causes charge leakage in adjacent rows, potentially altering their content and leading to device malfunction, which existing technologies have not adequately addressed.

Innovation Solution

A memory device with a protection circuit that includes a random number generator and counter to randomly select and protect vulnerable word lines by refreshing adjacent rows during subsequent refresh cycles, using a non-pseudo random number generation method to enhance security and performance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If traditional DRAM refresh mechanisms are used, then regular memory refresh is performed, but adjacent word lines remain vulnerable to row hammer attacks causing charge leakage

Engineering Contradiction:
Improvememory data integrityVSAvoidcharge leakage from row hammer effect
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The patent applies preliminary action by proactively identifying and protecting vulnerable adjacent word lines before row hammer attacks can cause charge leakage. The protection circuit monitors access patterns and preemptively refreshes or isolates adjacent word lines that are at risk, preventing the harmful effect rather than responding after damage occurs.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent introduces a protection circuit as an intermediary component between the memory controller and the memory array. This intermediary monitors word line access patterns, identifies potential row hammer vulnerabilities, and implements protective measures such as selective refreshing or isolation of adjacent word lines, thereby mediating the interaction between attack patterns and memory cells.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Reliability

If all word lines are refreshed frequently to prevent charge leakage, then data integrity is maintained, but memory access speed and productivity decrease

Engineering Contradiction:
Improvedata retentionVSAvoidmemory access speed
Core Design Contradiction:
ReliabilityVSProductivity

Solution Approach 1:

The patent applies local quality by implementing selective refresh operations only on specific vulnerable word lines rather than uniformly refreshing all word lines. The protection circuit identifies adjacent word lines that are at risk based on access patterns and applies refresh operations locally to those specific regions, maintaining data integrity where needed while preserving fast access performance in unaffected areas.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent uses partial action by performing refresh operations on only a subset of word lines that are identified as vulnerable to row hammer attacks. Instead of excessively refreshing all word lines, the system applies refresh operations partially and selectively to adjacent word lines based on monitored access patterns, optimizing the balance between protection and performance.

Inventive Principle:
Principle #16Partial or excessive action

3Reliability

If protection circuits are added to prevent row hammer attacks, then security is improved, but device complexity increases

Engineering Contradiction:
Improveprotection against row hammerVSAvoidcircuit structure
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent applies universality by designing a protection circuit that performs multiple functions: it monitors word line access patterns, identifies vulnerable adjacent word lines, and implements protective refresh operations. This multi-functional approach consolidates protection logic into a single integrated circuit rather than requiring separate components for each function, thereby improving security while minimizing the increase in device complexity.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Solution Approach 2:

The protection circuit applies self-service by autonomously monitoring access patterns and identifying vulnerable word lines without requiring external intervention or complex control logic. The circuit serves itself by using the same memory access signals to detect potential row hammer attacks and automatically implementing protective measures, reducing the need for additional complex control mechanisms.

Inventive Principle:
Principle #25Self-service

Data Source

PatentUS12487760B2Memory devices having protection circuit for protecting word line
Publication Date: 2025.12.02 NAN YA TECH
  • US12487760B2 patent drawing
  • US12487760B2 patent drawing
  • US12487760B2 patent drawing

AI summary

A memory device and a method for protecting the same are provided. The memory device includes a controller configured to refresh one of a plurality of word lines during a first refresh cycle in response to a refresh signal, a random number generator configured to generate a first number, a counter configured to receive the first number as an initial value of the counter, wherein the counter is configured to be turned on in response to the refresh signal, and an address register configured to store an address of a first word line active when the counter decrements to zero. The controller is configured to obtain the address of the first word line and protect a second word line during a second refresh cycle, wherein an address of the second word line is adjacent to the address of the first word line.