DRAM Memory Detection Using Interfering Wordlines and Forced Current Sinking
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Solution Overview
Problem
The DRAM manufacturing process faces issues such as short circuits between adjacent wordlines, leakage current, and structural problems due to unqualified key sizes, leading to storage unit failures and low product yield, which need to be filtered out during yield testing.
Innovation Solution
A memory detection method that initializes all storage units, determines target wordlines with interfering wordlines in between, performs repeated turn-on and turn-off operations on the interfering wordlines, and conducts read operations to detect potential failures by magnifying voltage differences, using forced current sinking to write and read data, thereby identifying double storage unit failures caused by manufacturing process differences.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If conventional yield testing is used to filter out defective storage units, then product yield can be maintained, but the detection precision for double storage unit failures caused by adjacent wordline short circuits is insufficient
Solution Approach 1:
The patent applies preliminary action by performing write operations on storage units connected to interfering wordlines before the main read operation. This preliminary writing step ensures that any potential leakage current or short circuit between adjacent wordlines is activated and can be detected during the subsequent read operation, thereby improving detection precision without compromising product yield.
Solution Approach 2:
The patent introduces interfering wordlines as intermediaries between adjacent target wordlines. By writing data to storage units connected to these interfering wordlines and then reading from storage units connected to the target wordlines, the method creates a detectable signal path that reveals the presence of short circuits or leakage current, enhancing measurement precision while maintaining reliable product yield.
2Measurement precision
If repeated turn-on and turn-off operations are performed on interfering wordlines to magnify voltage differences, then detection capability is improved, but test time increases
Solution Approach 1:
The patent employs periodic action by performing repeated turn-on and turn-off operations on the interfering wordlines. This periodic activation creates alternating voltage differences that can be detected during the read operation, thereby enhancing detection capability. The periodic nature of the operation allows for efficient detection without requiring excessive test time, as the voltage differences are magnified through the repeated cycling rather than continuous operation.
3Measurement precision
If forced current sinking is used to write data on interfering wordlines, then the voltage difference is magnified for better detection, but energy consumption increases
Solution Approach 1:
The patent applies parameter changes by using forced current sinking to alter the voltage state of the interfering wordlines during the write operation. This parameter change creates a significant voltage difference between the interfering wordline and the target wordline, which can be detected during the subsequent read operation. The forced current sinking is applied selectively and temporarily, thereby achieving effective voltage magnification for detection while controlling overall energy consumption.
Data Source
AI summary
Provided are a memory detection method, a computer device and a storage medium. The method includes: initializing all storage units in a storage unit array; determining a plurality of target wordlines, two adjacent target wordlines being provided with a plurality of interfering wordlines therebetween; turning on the target wordlines, and performing a write operation on storage units connected to the target wordlines; performing repeatedly turn-on and turn-off of the interfering wordlines for a plurality of times; and performing a read operation on the storage units connected to the target wordlines. A write operation is performed on the storage units connected to the interfering wordlines by means of forced current sinking.