Semiconductor Drift Region Doping via Multi-Depth Hydrogen Implantation
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Solution Overview
Problem
Existing semiconductor manufacturing methods struggle to accurately control the range and concentration of donor regions in semiconductor substrates, leading to inefficiencies and performance issues in semiconductor devices.
Innovation Solution
A semiconductor device with a specific hydrogen concentration distribution and donor concentration distribution in the semiconductor substrate, featuring multiple peaks and a flat region, is implemented. This is achieved by implanting hydrogen at specific depths and diffusing it to form VOH defects, which act as donors, thereby controlling the donor concentration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If hydrogen is implanted and diffused into the semiconductor substrate, then donor concentration is increased and crystal defects are reduced, but the range and concentration of donor regions cannot be controlled accurately
Solution Approach 1:
The patent divides the hydrogen implantation process into multiple steps with different implantation depths and doses. By implanting hydrogen at multiple depths (first depth, second depth, third depth) and using multiple diffusion processes, the patent creates a segmented donor concentration distribution with distinct peaks and valleys, enabling precise control over the spatial and concentration characteristics of donor regions
Solution Approach 2:
The patent systematically varies multiple parameters including hydrogen implantation depth, implantation dose, diffusion temperature, and diffusion time across different process steps. By changing these parameters in a controlled manner, the patent achieves precise regulation of donor concentration profiles, creating specific patterns with multiple peaks and flat regions that cannot be obtained with single-step processes
2Manufacturing precision
If multiple hydrogen implantation and diffusion steps are performed, then donor concentration distribution is precisely controlled, but manufacturing process complexity increases
Solution Approach 1:
The patent uses hydrogen implantation and diffusion as a multi-functional process that simultaneously achieves multiple objectives: creating donor regions, controlling carrier concentration, shaping conductivity profiles, and forming specific peak patterns. This universal approach consolidates what would otherwise require multiple different doping processes into a single integrated methodology
Solution Approach 2:
The patent performs preliminary hydrogen implantation at specific depths and doses before final diffusion processing. By pre-positioning hydrogen at strategic locations through multiple implantation steps, the subsequent diffusion process naturally produces the desired concentration profile with multiple peaks and flat regions, reducing the need for complex real-time adjustments during manufacturing
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed solution allows for precise control of donor concentrations, enhancing the performance and efficiency of semiconductor devices by optimizing the carrier concentration distribution and reducing defects.
Implementation Method 1
implanting hydrogen at specific depths and diffusing it
Implementation Method 2
diffusing it to form VOH defects
Data Source
AI summary
A semiconductor device comprising a semiconductor substrate including an upper surface and a lower surface wherein a donor concentration of a drift region is higher than a base doping concentration of the semiconductor substrate, entirely over the drift region in a depth direction connecting the upper surface and the lower surface is provided.