Semiconductor Drift Region Layout for Hot-Carrier Leakage Control
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Solution Overview
Problem
In semiconductor devices like MOSFETs, severe hot carriers can degrade reliability and induce high leakage current, leading to malfunction, which existing technologies have not effectively addressed.
Innovation Solution
A method for manufacturing semiconductor devices involves forming a trench, a dielectric layer, and an anti-type doping layer with a conductivity type opposite to the drift region, positioned between the drift region and the dielectric film, to alter the current path and reduce the influence of dielectric damages on the current flow.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional MOSFET structure is used, then device simplicity and manufacturing ease are maintained, but severe hot carriers degrade reliability and induce high leakage current
Solution Approach 1:
The device is segmented into distinct functional regions: a drift region with first conductivity type, a second region with second conductivity type adjacent to the drift region, and a third region with third conductivity type adjacent to the second region. This segmentation allows each region to perform specific functions in managing carrier flow and reducing hot carrier effects, thereby improving reliability without excessive complexity.
Solution Approach 2:
Different regions of the device are assigned different conductivity types and doping characteristics tailored to local requirements. The drift region handles high voltage blocking, the second region manages carrier transition, and the third region controls current flow. This local optimization reduces hot carrier generation in critical areas while maintaining overall device performance.
2Reliability
If existing MOSFET structures are used, then manufacturing process simplicity is maintained, but hot carriers cause high leakage current and malfunction
Solution Approach 1:
The multi-region structure with alternating conductivity types is built into the device architecture during manufacturing, before the device operates. The drift region, second region, and third region are pre-configured with appropriate doping types and concentrations to preemptively manage carrier behavior and prevent hot carrier formation, thereby reducing leakage current from the outset.
Solution Approach 2:
The device employs a composite structure combining regions of different conductivity types (n-type and p-type) in a systematic arrangement. This composite approach creates internal fields that guide carrier flow and reduce hot carrier effects, improving leakage current characteristics while using standard semiconductor materials and fabrication techniques.
Data Source
AI summary
A semiconductor device includes a drift region, a dielectric film, and an anti-type doping layer. The drift region has a first type conductivity. The anti-type doping layer is located between the drift region and the dielectric film, and has a second type conductivity opposite to the first type conductivity so as to change a current path of a current in the drift region, to thereby prevent the current from being influenced by the dielectric film. A method for manufacturing a semiconductor device and a method for reducing an influence of a dielectric film are also disclosed.