Drive Control Circuit for Switching Speed and EMI Noise Reduction

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Solution Overview

Problem

Existing drive control circuits require complex configurations to adjust the drive capability of output transistors and detect threshold values, complicating the process of increasing switching speed while suppressing EMI noise.

Innovation Solution

A drive control circuit that includes a first drive transistor, a capacitor with a reference potential, a comparison circuit, and a control signal generation circuit, allowing for the detection of a threshold voltage and adjustment of drive capability in a simplified configuration by using switching signals with dead time and hysteresis characteristics to manage the drive current and reduce noise.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Speed

If a preliminarily stored threshold value for an output transistor is used, then the switching speed of the output transistor can be increased and EMI noise can be suppressed, but a storage circuit for the threshold value is needed, making the circuit configuration complicated

Engineering Contradiction:
Improveswitching speedVSAvoidcircuit configuration
Core Design Contradiction:
SpeedVSDevice complexity

Solution Approach 1:

The output transistor itself generates and provides the threshold voltage through its own gate-source junction characteristics. The threshold voltage is detected by monitoring the gate-source voltage when the transistor transitions between conduction states, eliminating the need for external storage circuits or separate threshold voltage generation circuits.

Inventive Principle:
Principle #25Self-service

Solution Approach 2:

The gate-source voltage of the output transistor serves multiple functions: it acts as both the control signal for switching and as the threshold voltage reference for detection. This multi-functionality eliminates the need for separate threshold voltage storage circuits, simplifying the overall circuit configuration while maintaining switching speed and EMI noise suppression capabilities.

Inventive Principle:
Principle #6Universality (Multi-functionality)

2Speed

If the drive capability of a drive element is increased to enhance switching speed, then the switching speed increases, but inrush currents and EMI noise increase

Engineering Contradiction:
Improveswitching speedVSAvoidinrush current and EMI noise
Core Design Contradiction:
SpeedVSObject-generated harmful factors

Solution Approach 1:

The drive capability of the drive element is dynamically adjusted based on the detected threshold voltage. By adapting the drive strength to the actual transistor characteristics, the system achieves optimal switching speed while preventing excessive inrush currents and EMI noise that would result from fixed high-drive configurations.

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The threshold voltage detection creates a feedback mechanism that informs the drive element control. The detected threshold voltage is used to adjust the drive element's operation, enabling the system to achieve fast switching without generating harmful inrush currents or EMI noise by optimizing the drive strength according to actual transistor behavior.

Inventive Principle:
Principle #23Feedback

Data Source

PatentUS11476846B2Drive control circuit
Publication Date: 2022.10.18 KK TOSHIBA
  • US11476846B2 patent drawing
  • US11476846B2 patent drawing
  • US11476846B2 patent drawing

AI summary

According to one embodiment, a drive control circuit includes a first transistor that supplies a current to a gate of an output transistor in response to a drive signal, a second transistor that supplies a current to a capacitor in response to the drive signal, a comparison circuit that compares a gate voltage of the output transistor and a voltage of the capacitor, a control signal generation circuit that generates a control signal in response to an output signal of the comparison circuit and the drive signal, and a third transistor that supplies a current to a gate of the output transistor in response to the control signal.