3D Non-Volatile Memory Driving Gate Dummy Patterns
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Solution Overview
Problem
The manufacturing process of 3D non-volatile memory devices faces reliability issues due to the simultaneous patterning of pipe gates and driving gates, which can lead to defects and varying resistance in driving transistors.
Innovation Solution
The introduction of dummy patterns in the driving gates, formed on a separate region from the pipe gates, allows for improved patterning and reduces defects by preventing the dishing phenomenon and ensuring uniformity in the conductive film, thereby enhancing the manufacturing process reliability and transistor resistance uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If pipe gates and driving gates are simultaneously patterned, then manufacturing process efficiency is improved, but manufacturing reliability deteriorates due to defects and varying resistance
Solution Approach 1:
The patent divides the gate patterning process into two separate stages: first patterning the pipe gate in the first region, then patterning the driving gate in the second region. This segmentation allows each gate to be processed independently with optimized parameters, preventing the dishing phenomenon that occurs when both are patterned simultaneously, thereby improving manufacturing reliability while maintaining efficiency through continuous processing.
2Device complexity
If pipe gate and driving gate are formed on the same layer, then device complexity is reduced, but manufacturing precision deteriorates due to the dishing phenomenon
Solution Approach 1:
The patent segments the gate formation process by first forming the pipe gate, then forming the driving gate separately in subsequent processing steps. This prevents the dishing phenomenon that would occur if both gates were formed simultaneously from a single conductive film layer, ensuring uniform thickness and electrical characteristics while maintaining relatively simple device structure.
Solution Approach 2:
The pipe gate is formed in advance before the driving gate is formed. This preliminary action allows the conductive film to be prepared and processed specifically for the pipe gate first, then a separate conductive film is formed for the driving gate, ensuring both gates have uniform thickness without the dishing problem that would occur with simultaneous formation.
Data Source
AI summary
A 3D non-volatile memory device including a substrate that includes a first region and a second region; a pipe channel film that is formed on the substrate in the first region; a pipe gate that substantially encloses the pipe channel film; and a driving gate that is formed on the substrate in the second region and has at least one dummy pattern.