Dry-Deposited Surface Finish for Damage-Free Semiconductor Layers

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Solution Overview

Problem

The complexity of computer chip manufacturing requires precise processes to minimize defects, particularly in the application of surface finishes, where existing methods like 'rock and shock' can damage the chips due to mechanical agitation.

Innovation Solution

A dry deposition method using a sputtering or chemical vapor deposition process to apply a nickel-palladium-gold surface finish directly on exposed surfaces without liquid-based plating, eliminating the need for mechanical agitation and reducing damage.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If electroless surface finishing with mechanical agitation (rock and shock) is used, then bubbles are removed and uniform surface finish is achieved, but the layer or chip can contact the sides of the basket and be damaged

Engineering Contradiction:
Improveuniformity of surface finishVSAvoidmechanical damage to chip
Core Design Contradiction:
Manufacturing precisionVSObject-affected harmful factors

Solution Approach 1:

The patent replaces the mechanical agitation system (rock and shock basket) with a chemical vapor deposition process. The surface finish is applied through vapor-phase chemical reactions without mechanical movement or agitation, eliminating the harmful mechanical contact that causes chip damage while still achieving uniform coating through controlled vapor deposition

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The patent changes the fundamental parameters of the surface finishing process from liquid-based electroless plating requiring mechanical agitation to vapor-based chemical deposition. This parameter change allows the process to proceed without mechanical movement, achieving both uniformity through controlled vapor distribution and zero mechanical damage

Inventive Principle:
Principle #35Parameter changes

2Reliability

If complex manufacturing processes are used to apply surface finish, then surface protection is improved, but manufacturing complexity and defect risk increase

Engineering Contradiction:
Improveprotection against oxidationVSAvoidmanufacturing process complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent extracts and eliminates the complex liquid-based electroless plating process including basket agitation, bubble management, and multiple rinsing steps. The simplified chemical vapor deposition process achieves the same oxidation protection with fewer process steps, reducing manufacturing complexity and defect risk

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The patent uses an inert or controlled atmosphere in the chemical vapor deposition process to prevent oxidation during coating application. This approach provides reliable surface protection while avoiding the complex liquid chemical environments and agitation mechanisms required by electroless plating

Inventive Principle:
Principle #39Inert atmosphere (Inert environment)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This method ensures a uniform and damage-free application of the surface finish, enhancing the integrity and lifespan of electronic components by avoiding mechanical stress during the manufacturing process.

Implementation Method 1

A dry deposition method using a sputtering or chemical vapor deposition process to apply a nickel-palladium-gold surface finish

Methodology Applied
Scientific EffectSputtering: Sputtering

Implementation Method 2

A dry deposition method using a sputtering or chemical vapor deposition process to apply a nickel-palladium-gold surface finish

Methodology Applied
Scientific EffectChemical vapor deposition: Chemical Vapour Deposition

Data Source

PatentUS20250006671A1Semiconductor layer with dry deposition layer
Publication Date: 2025.01.02 INTEL CORP
  • US20250006671A1 patent drawing
  • US20250006671A1 patent drawing
  • US20250006671A1 patent drawing

AI summary

An intermediary layer, such as a dry deposition layer or a surface finish, is deposited on at least one exposed surface of surfaces within a layer of a semiconductor substrate. The intermediary layer is deposited on at least an electrically conductive material within a cavity in a layer. The intermediary layer is deposited using a chemical deposition process such as physical vapor deposition, chemical vapor deposition or sputtering.