Dry Deposition Surface Finish for Damage-Free Semiconductor Cavities

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Solution Overview

Problem

The complexity of computer chip manufacturing requires precise processes to minimize defects, particularly in the application of surface finishes, where existing methods like 'rock and shock' can damage the chips due to mechanical agitation.

Innovation Solution

A dry deposition method is introduced, where a thin layer of metals like nickel, palladium, or gold is applied using techniques like sputtering or chemical vapor deposition directly onto the chip surfaces without liquid-based processes, eliminating the need for mechanical agitation and thus reducing damage.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If electroless surface finishing with mechanical agitation (rock and shock) is used, then surface finish is applied to the chip, but the chip can contact the sides of the basket and be damaged

Engineering Contradiction:
Improvechip integrityVSAvoidmechanical damage
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The patent replaces the mechanical agitation method (rock and shock) with a chemical deposition method (electroless plating). The surface finish is applied through chemical reaction in a plating solution without mechanical contact or agitation, eliminating the harmful mechanical forces that cause chip damage while still achieving complete surface coverage.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

2Manufacturing precision

If bubbles are present during surface finish application, then deposition is incomplete, but mechanical agitation to remove bubbles causes chip damage

Engineering Contradiction:
Improvesurface finish coverageVSAvoidchip damage
Core Design Contradiction:
Manufacturing precisionVSObject-affected harmful factors

Solution Approach 1:

The patent eliminates mechanical agitation entirely by using electroless plating, where chemical reduction reactions deposit the surface finish uniformly. Bubbles are prevented from forming through controlled chemical processes and gentle handling, allowing complete surface coverage without mechanical contact that could damage the chip.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

3Object-affected harmful factors

If dry deposition method is used, then mechanical damage is eliminated, but deposition uniformity must be maintained

Engineering Contradiction:
Improvemechanical damageVSAvoiddeposition uniformity
Core Design Contradiction:
Object-affected harmful factorsVSManufacturing precision

Solution Approach 1:

The patent controls deposition uniformity by precisely managing chemical parameters including solution composition, temperature, deposition time, and agitation speed. These parameter optimizations ensure uniform surface finish coverage while maintaining the gentle chemical deposition process that avoids mechanical damage to the chip.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This method ensures a stable and damage-free application of surface finishes, enhancing the chip's resistance to corrosion and environmental factors while maintaining precision and integrity, thereby improving the manufacturing process and chip performance.

Implementation Method 1

The dry deposition layer can be applied with a physical vapor deposition (PVD) process, a chemical vapor deposition (CVD) process, or an atomic layer deposition (ALD) process

Methodology Applied
Scientific EffectPhysical vapor deposition: Physical Vapour Deposition

Implementation Method 2

The dry deposition layer can be applied with a physical vapor deposition (PVD) process, a chemical vapor deposition (CVD) process, or an atomic layer deposition (ALD) process

Methodology Applied
Scientific EffectChemical vapor deposition: Chemical Vapour Deposition

Data Source

PatentEP4485509A1Semiconductor layer with dry deposition layer
Publication Date: 2025.01.01 INTEL CORP
  • EP4485509A1 patent drawingFigure 1
  • EP4485509A1 patent drawingFigure 2A~2B
  • EP4485509A1 patent drawingFigure 3

AI summary

An intermediary layer, such as a dry deposition layer or a surface finish, is deposited on at least one exposed surface of surfaces within a layer of a semiconductor substrate. The intermediary layer is deposited on at least an electrically conductive material within a cavity in a layer. The intermediary layer is deposited using a chemical deposition process such as physical vapor deposition, chemical vapor deposition or sputtering.