Dry Etching Semiconductor Chip Separation
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Solution Overview
Problem
Conventional methods for separating and transferring semiconductor integrated circuit chips from a wafer are inefficient, particularly in handling non-rectangular shapes and preventing the leakage of proprietary test device knowledge, as they often result in waste of space and incomplete separation.
Innovation Solution
A method involving dry etching with a mask pattern that exposes a line-shaped or curved pattern to a depth of about ⅔ of the wafer thickness, using a thermoplastic resin to connect separated chips and prevent etching of the transfer sheet, and transferring chips using a fluid flow or mechanical impact to minimize waste and ensure complete separation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional separation methods are used, then chips can be separated from the wafer, but space is wasted and separation is incomplete
Solution Approach 1:
The method performs preliminary actions by forming a mask pattern and etching grooves to a depth of about 2/3 of the wafer thickness before complete separation. This preliminary etching creates precise separation paths that enable complete chip separation while minimizing space waste, as the grooves are formed exactly where needed before the final separation step.
Solution Approach 2:
The invention replaces conventional mechanical separation methods with a combination of dry etching and fluid flow. By using plasma etching to create grooves and then applying fluid flow to complete the separation, the method achieves more precise and complete separation compared to traditional mechanical dicing, thereby reducing space waste and improving separation efficiency.
2Reliability
If test devices are formed on the wafer, then testing can be performed, but proprietary information may leak through incomplete separation
Solution Approach 1:
The method performs preliminary etching to a depth of about 2/3 of the wafer thickness before final separation. This preliminary action creates sufficient separation depth to prevent proprietary information leakage while preserving test device functionality. The etched grooves are deep enough to isolate test devices on separated chips but not so deep as to damage them.
Solution Approach 2:
The invention applies local quality by etching grooves to a specific depth of about 2/3 of the wafer thickness in the regions where test devices are located. This localized etching depth provides just enough separation to prevent information leakage while maintaining the integrity and functionality of the test devices, achieving a balance between security and functionality.
3Adaptability or versatility
If chips with unique shapes are separated, then arrangement flexibility is improved, but conventional separation methods cannot handle them effectively
Solution Approach 1:
The invention replaces mechanical separation methods with dry etching followed by fluid flow separation. This substitution enables effective separation of chips with unique and irregular shapes, as the etching process can precisely follow complex groove patterns defined by mask layers, whereas mechanical methods struggle with non-standard geometries.
Solution Approach 2:
The method changes the separation mechanism from mechanical force to a combination of plasma etching and fluid flow. This parameter change allows the process to accommodate chips with various shapes and orientations, as the etching depth and fluid flow direction can be precisely controlled to match the specific geometry of each chip configuration.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method allows for efficient separation and transfer of semiconductor chips with unique shapes, preventing the leakage of proprietary information and optimizing space usage, while reducing manufacturing costs by minimizing waste and enhancing chip arrangement flexibility in System in Package designs.
Implementation Method 1
The dry etching may be performed by using plasma
Implementation Method 2
transferring separated semiconductor devices or semiconductor integrated circuits by a flow of a fluid
Implementation Method 3
using a thermoplastic resin to connect separated chips and prevent etching of the transfer sheet
Implementation Method 4
applying a mechanical/thermal impact, thus breaking a remaining silicon layer connecting the chips and completing separation of the chips
Data Source
AI summary
A method for separating a multiple number of semiconductor devices or semiconductor integrated circuits from a wafer on which the multiple number of semiconductor devices or semiconductor integrated circuits are formed is provided. The method includes separating each of the semiconductor devices or semiconductor integrated circuits. Each of the separated semiconductor devices or semiconductor integrated circuits is non-rectangular shaped, and the step of separating each of the semiconductor devices or semiconductor integrated circuits is performed by dry etching. A test device is formed on an area of a groove width required for separating the semiconductor devices or semiconductor integrated circuits, and the semiconductor devices or semiconductor integrated circuits are separated without a waste of space except for the area of the groove width required for separating the semiconductor devices or semiconductor integrated circuits, with the test device being separated from the semiconductor devices or semiconductor integrated circuits.