Dry Vacuum Pump In-Situ Cleaning with Hydrofluoric Acid
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
In semiconductor manufacturing, dry vacuum pumps suffer from adherent organic residue coatings due to metal organic precursor processes, leading to reduced efficiency and premature wear, as these coatings accumulate and affect the pump's performance.
Innovation Solution
Injecting dilute hydrofluoric acid into the dry pump's inlet when the semiconductor process chamber is idle, allowing the acid to vaporize and interact with and dissolve the organic deposits, which are then removed through the pump's exhaust path.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If metal organic precursor processes are used in semiconductor manufacturing, then semiconductor device fabrication is enabled, but adherent organic residue coatings accumulate on dry pump surfaces
Solution Approach 1:
The patent introduces a chemical cleaning process using hydrofluoric acid to convert the harmful organic residue buildup into a beneficial cleaning action. The acid chemically reacts with and removes the adherent organic coatings that accumulate on pump surfaces, transforming the problem of residue accumulation into a controlled chemical cleaning process that restores pump performance
Solution Approach 2:
The patent changes the chemical environment within the pump by introducing hydrofluoric acid vapor or liquid during idle periods. This parameter change from a vacuum environment to a chemical cleaning environment enables the removal of organic residues through chemical reaction, allowing the pump to be cleaned in-situ without disassembly
2Productivity
If dry pump operation continues without cleaning, then vacuum processing can proceed, but pump efficiency decreases and wear increases
Solution Approach 1:
The patent implements periodic cleaning cycles during idle periods between semiconductor processing runs. Instead of continuous operation without maintenance, the system alternates between processing mode and cleaning mode, allowing organic residues to be removed at regular intervals before they significantly degrade pump performance
Solution Approach 2:
The pump cleaning system is integrated into the pump structure itself, allowing the pump to clean its own internal surfaces without external intervention or disassembly. The hydrofluoric acid is introduced through existing pump ports and circulates through the internal pathways, enabling self-cleaning functionality
3Ease of manufacture
If traditional cleaning methods are used, then pump disassembly is required, but maintenance time and complexity increase
Solution Approach 1:
The patent uses hydrofluoric acid as an intermediary cleaning agent that can access pump internal surfaces through existing ports without requiring disassembly. The acid acts as a mediator that chemically removes residues from areas that would otherwise require mechanical access, eliminating the need for pump teardown
Solution Approach 2:
The patent replaces mechanical cleaning methods (which would require disassembly and manual scraping or wiping) with a chemical cleaning system. Hydrofluoric acid vapor or liquid is introduced into the pump and chemically dissolves organic residues, substituting mechanical intervention with chemical action
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Effectively removes adherent organic and metalorganic deposits from dry vacuum pumps, enhancing their performance and extending their lifespan by preventing premature wear and failure, while being cost-effective and reducing maintenance needs.
Implementation Method 1
allowing the acid to vaporize and interact with and dissolve the organic deposits
Implementation Method 2
allowing the acid to vaporize and interact with and dissolve the organic deposits
Data Source
AI summary
The present invention relates to vacuum processing systems in which process gases are introduced in a process chamber and are exhausted through a vacuum processing system exhaust path. Deposits made by the exhausted gases in one or more dry vacuum pumps are removed by introducing hydrofluoric acid upstream of the dry pump while the processing chamber is idle. The hydrofluoric acid is introduced upstream of the dry pump through a nozzle in the foreline or at the inlet to the dry pump.


