Directed Self-Assembly Block Copolymer Line Cutting
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Solution Overview
Problem
The density scaling of integrated circuit patterns is limited by the distance between line ends, which does not follow optical scaling, leading to a decrease in packing density and increased costs due to the complexity of lithography techniques required for dense line structures.
Innovation Solution
A method using directed self-assembly of block copolymers with hexagonal close-packed morphology to create tightly packed arrays of cut lines by forming trenches and holes that align with the underlying topography, allowing for smaller cut spaces and reduced lithographic complexity through a two-print, two-etch, and two-directed self-assembly process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If traditional lithography is used to create dense line structures, then manufacturing precision can be maintained at larger dimensions, but manufacturing cost increases and packing density decreases due to optical scaling limits
Solution Approach 1:
The block copolymer system performs self-assembly to automatically form the trench patterns and cut structures without requiring additional lithographic steps. The minority cylindrical phase self-organizes into hexagonal close-packed arrays that align with the underlying line topography, enabling self-directed pattern formation and reducing manufacturing complexity
Solution Approach 2:
The invention changes the physical and chemical parameters of the system by introducing block copolymers with specific characteristics (minority cylindrical phase, HCP morphology, characteristic dimension Lo matching line spacing). These parameter changes enable the system to achieve densities beyond optical lithography limits while reducing process complexity
2Manufacturing precision
If traditional lithography is used to create dense line structures, then manufacturing precision can be maintained, but packing density decreases due to optical scaling limits
Solution Approach 1:
The block copolymer system performs self-assembly to automatically form the trench patterns and cut structures without requiring additional lithographic steps. The minority cylindrical phase self-organizes into hexagonal close-packed arrays that align with the underlying line topography, enabling self-directed pattern formation and reducing manufacturing complexity
Solution Approach 2:
The invention changes the physical and chemical parameters of the system by introducing block copolymers with specific characteristics (minority cylindrical phase, HCP morphology, characteristic dimension Lo matching line spacing). These parameter changes enable the system to achieve densities beyond optical lithography limits while reducing process complexity
3Quantity of substance
If double patterning is used to create dense line structures, then packing density can be improved, but device complexity increases due to multiple lithographic steps
Solution Approach 1:
The block copolymer system performs self-assembly to automatically form the trench patterns and cut structures without requiring additional lithographic steps. The minority cylindrical phase self-organizes into hexagonal close-packed arrays that align with the underlying line topography, enabling self-directed pattern formation and reducing manufacturing complexity
Solution Approach 2:
The invention changes the physical and chemical parameters of the system by introducing block copolymers with specific characteristics (minority cylindrical phase, HCP morphology, characteristic dimension Lo matching line spacing). These parameter changes enable the system to achieve densities beyond optical lithography limits while reducing process complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the creation of densely packed line structures with reduced overlay errors and increased packing density, achieving tighter cut spaces at lower costs by leveraging the topography to anchor the self-assembly process and guide the formation of precise cuts.
Implementation Method 1
aligning and preparing a first directed self-assembly (DSA) pattern immediately overlying the plurality of lines
Implementation Method 2
a block copolymer having a hexagonal close-packed (HCP) morphology
Implementation Method 3
The first and second sets of trenches are preferential to wetting by a majority phase of the block copolymer and guide formation of the first and second sets of holes
Data Source
AI summary
A method for patterning topography is provided. A substrate is provided with a plurality of lines. The method includes aligning and preparing a first directed self-assembly (DSA) pattern overlying the lines, transferring the first pattern to form first line cuts, aligning and preparing a second DSA pattern overlying the lines, and transferring the second pattern to form second line cuts. The DSA patterns include trenches and holes of diameter d, and each comprise a block copolymer having HCP morphology, a characteristic dimension Lo approximately equal to the line pitch, and a minority phase of the diameter d. The trenches are wet by a majority phase of the block copolymer and guide formation of the holes. The aligning and preparation of the DSA patterns include overlapping the two sets of trenches such that areas between holes of one pattern and adjacent holes of the other pattern are shared by adjacent trenches.