DSA Guiding Pattern Generation for Sub-22 nm Lithography
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Solution Overview
Problem
Conventional lithographic techniques face challenges in achieving long-range order and uniformity for sub-22 nm feature sizes due to small variations in polymer chain configurations, leading to chaotic patterns, and require additional patterning steps and high costs with multiple patterning techniques.
Innovation Solution
The method involves generating guiding patterns for via-type feature groups using a potential energy function that accounts for interactions between features and wall effects, with iterative adjustments to seeding positions until termination conditions are met, leveraging directed self-assembly (DSA) techniques to achieve precise control over polymer self-organization.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional lithographic techniques are used to achieve sub-22 nm features, then resolution can be maintained through multiple patterning, but the number of patterning steps and cost increase significantly
Solution Approach 1:
The patent employs directed self-assembly where block copolymer molecules spontaneously organize into desired patterns without requiring external patterning for each feature. The system uses self-driven phase separation of diblock copolymers to form nanoscale patterns, eliminating the need for multiple sequential lithography steps and significantly reducing process complexity while maintaining sub-22 nm resolution
Solution Approach 2:
The invention changes the fundamental parameter from top-down lithographic patterning to bottom-up self-assembly. By controlling polymer composition, molecular weight, and annealing conditions, the system achieves precise feature formation through thermodynamic self-organization rather than sequential lithographic exposure and etching steps
2Manufacturing precision
If grapho-epitaxy is used to guide DSA, then local order can be achieved, but long range order remains chaotic due to polymer chain variations
Solution Approach 1:
The patent segments the patterning function into two independent components: a guiding pattern that provides local geometric confinement and a block copolymer layer that provides long-range self-organization. The guiding pattern (formed by conventional lithography) defines local feature locations, while the DSA process independently establishes long-range order through polymer phase separation, with the two working synergistically rather than hierarchically
Solution Approach 2:
The invention creates a composite patterning system combining inorganic guiding pattern materials (such as mandrel structures) with organic block copolymer materials. This composite approach allows the inorganic component to provide geometric constraints while the organic component provides self-organizing capability, achieving both local and long-range order simultaneously
3Manufacturing precision
If chemo-epitaxy is used to define preferred direction, then dense gratings can be patterned, but the guiding pattern requires precise chemical functionalization
Solution Approach 1:
The patent extracts the chemical interaction requirement from the guiding pattern by using purely geometric confinement through grapho-epitaxy. Instead of requiring chemical functionalization of the guiding pattern to direct assembly, the invention uses physical geometric constraints (grooves, pillars, or holes) to guide block copolymer self-assembly, significantly simplifying the fabrication process while maintaining high pattern density capability
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the formation of uniform, high-resolution patterns by guiding DSA processes, reducing the need for additional patterning steps and mask counts, while maintaining yield and scalability, thus addressing the limitations of conventional lithography.
Implementation Method 1
the spontaneous phase behavior found among polymers on the molecular level. Of particular interest are diblock copolymers formed by chemically connecting normally incompatible species
Implementation Method 2
the main mechanism by which the block-copolymer self organizes in useful domains, is dominated by the concept of confinement. Neutral walls or pillars prevent certain chain configurations which then lead to the polymer to adjust its periodic structures along a pre-determined axis
Data Source
AI summary
Aspects of the disclosed technology relate to techniques of generating guiding patterns for via-type feature groups. A guiding pattern is constructed based on seeding positions for a via-type feature group. The initial seeding positions are derived from targeted locations of via-type features in the via-type feature group. A potential energy function is then determined for the guiding pattern. Based on the potential energy function, simulated locations of the via-type features are computed. The seeding positions are compared with the targeted locations and may be adjusted based on differences between the simulated locations and the targeted locations. The above operations may be repeated until one of one or more termination conditions are met.