Guiding Pattern Optimization for Directed Self-Assembly
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Solution Overview
Problem
Conventional lithographic techniques face challenges in achieving further scaling below 22 nm due to limitations in numerical aperture and the high cost of multiple patterning techniques, while directed self-assembly (DSA) offers promise but requires optimized guiding patterns to ensure long-range order and reduce chaotic patterns.
Innovation Solution
A method for generating and optimizing guiding patterns for via-type features through directed-self-assembly, involving the construction of an initial guiding pattern, extraction of predicted location and size parameters, and iterative adjustment of guiding pattern parameters based on correlation information and simulations, such as Monte-Carlo simulations, to achieve precise alignment and dimensionality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional lithographic techniques are used to achieve further scaling below 22 nm, then resolution enhancement techniques and liquid immersion can be employed, but the numerical aperture NA has only marginally increased and the k1 value is approaching the theoretical limit of 0.25
Solution Approach 1:
The patent introduces a self-assembled monolayer (SAM) as an intermediary layer between the substrate and the block copolymer film. This SAM layer with specific surface energy characteristics directs the self-assembly process, enabling precise pattern formation that overcomes the numerical aperture limitations of conventional lithography. The SAM acts as a mediator that translates macroscopic lithographic patterns into nanoscale self-assembled structures.
Solution Approach 2:
The patent changes the surface energy parameter of the substrate by applying a self-assembled monolayer with controlled surface energy characteristics. This parameter change directs the phase separation behavior of the block copolymer, enabling precise control over pattern formation and orientation without requiring further increases in numerical aperture.
2Manufacturing precision
If multiple patterning techniques are used to achieve further scaling, then the resolution required for further scaling can be provided, but the overall cost to implement multiple patterning techniques has reached a level that other techniques may need to be explored
Solution Approach 1:
The patent employs directed self-assembly where the block copolymer system automatically organizes itself into the desired pattern configuration through spontaneous phase separation. This self-service mechanism eliminates the need for multiple manual patterning steps, reducing both manufacturing complexity and cost while achieving the required resolution for further scaling.
Solution Approach 2:
The patent applies a self-assembled monolayer to the substrate beforehand to pre-establish the surface energy landscape that will guide the subsequent block copolymer self-assembly. This preliminary action ensures that the self-assembly process proceeds in the desired direction, eliminating the need for multiple corrective patterning steps.
3Ease of operation
If grapho-epitaxy is used for directed self-assembly, then the guiding pattern can be very local and there is limited interdependency between different organization domains, but the block-copolymer self organization is dominated by the concept of confinement
Solution Approach 1:
The patent introduces a self-assembled monolayer as an intermediary that bridges the gap between local grapho-epitaxy guiding patterns and long-range order. The SAM layer with its extended surface energy characteristics translates local confinement cues into coherent long-range ordering, allowing the system to benefit from both local guidance and global order.
4Manufacturing precision
If chemo-epitaxy is used for directed self-assembly, then the ability to pattern dense gratings or arrays can be achieved as the guiding patterns are underneath the block-copolymer, but the surface energy of the substrate needs to be changed
Solution Approach 1:
The patent uses a self-assembled monolayer that spontaneously forms on the substrate surface, creating the required surface energy modification without complex external intervention. The SAM self-organizes to provide the appropriate surface energy landscape for directing block copolymer assembly into dense gratings and arrays.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the production of high-resolution via-type features with improved long-range order and reduced patterning errors, potentially reducing the total mask count and maintaining yield, thus making DSA a viable alternative to current lithographic techniques.
Implementation Method 1
the spontaneous phase behavior found among polymers on the molecular level
Implementation Method 2
various structures can spontaneously form
Implementation Method 3
chemically patterning a surface to create local affinities to the various portions of the block co-polymers
Implementation Method 4
a self-assembled monolayer with specific surface energy characteristics
Data Source
AI summary
Aspects of the disclosed technology relate to techniques of generating guiding patterns for via-type features. An initial guiding pattern characterized by a plurality of guiding pattern parameters is constructed for two or more via-type features in a layout design based on target values of location and size parameters for the two or more via-type features. Predicted values of the location and size parameters are then extracted from the initial guiding pattern based on simulations or correlation information between the plurality of guiding pattern parameters and the location and size parameters. Based on the predicted values of the location and size parameters, the target values of location and size parameters and the correlation information, a modified guiding pattern is determined by adjusting one or more parameters of the plurality of guiding pattern parameters. The extraction and determination operations may be iterated.