Guiding Patterns for Directed Self-Assembly via Lithography
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Solution Overview
Problem
Conventional lithographic techniques face challenges in achieving long-range order and uniformity below 22 nm due to small variations in polymer chain lengths, leading to chaotic patterns, and require costly multiple patterning methods.
Innovation Solution
The development of techniques to generate guiding patterns for via-type feature groups using di-block copolymers, where the guiding pattern is constructed based on area ratio information and simulated locations are adjusted to match targeted locations using elastic potential energy models, allowing for precise control of self-assembly.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional lithographic techniques are used to achieve long-range order and uniformity below 22 nm, then manufacturing precision is improved, but device complexity and cost increase due to multiple patterning methods
Solution Approach 1:
The patent introduces a guiding pattern as an intermediary structure that directs the self-assembly of block copolymers. This guiding pattern, formed by conventional lithography, acts as a template that channels the spontaneous phase separation of the polymer system into desired long-range ordered structures, thereby achieving uniformity below 22 nm without requiring complex multiple patterning methods
Solution Approach 2:
The patent utilizes the self-assembly property of block copolymers to automatically form ordered structures without external intervention during the patterning process. The polymers spontaneously phase separate and organize into uniform patterns guided by the initial template, eliminating the need for repeated lithographic patterning steps and reducing overall process complexity
2Ease of manufacture
If small variations in polymer chain lengths occur, then ease of manufacture is improved, but manufacturing precision deteriorates leading to chaotic patterns
Solution Approach 1:
The patent applies local quality by creating regions with different guiding pattern densities and geometries that locally compensate for polymer chain variations. The guiding pattern structure is designed to provide localized constraints that guide self-assembly even when polymer chains have slight length variations, ensuring uniform pattern formation in each local region while maintaining ease of manufacture
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the formation of uniform, high-resolution patterns below 22 nm without the need for new capital equipment, reducing mask counts and integrating with existing lithographic techniques, thus overcoming the limitations of conventional methods.
Implementation Method 1
In self-assembly, the formation of features of fine geometric dimensions actually occurs not through external patterning, but through the spontaneous phase behavior found among polymers on the molecular level
Implementation Method 2
the spontaneous phase behavior found among polymers on the molecular level
Implementation Method 3
One self-assembly model that can be employed by various embodiments of the invention is based on elastic potential energy (Hooke's law). The simulated locations may be derived by minimizing the potential energy of the di-block copolymer within the guiding pattern
Data Source
AI summary
Aspects of the invention relate to techniques of generating guiding patterns for via-type feature groups. A guiding pattern may be constructed for a via-type feature group that comprises two or more via-type features in a layout design. A backbone structure may then be determined for the guiding pattern. Based on the backbone structure and a self-assembly model, simulated locations of the two or more via-type features are computed. The simulated locations are compared with targeted locations. If the simulated locations do not match the targeted locations based on a predetermined criterion, the simulated locations adjusted to derive modified locations. Using the modified locations, the above operations may be repeated until the simulated locations match the targeted location based on a predetermined criterion or for a predetermined number of times.