Sublithographic Kelvin Structure via DSA Guide Pattern
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Solution Overview
Problem
Current directed self-assembly (DSA) techniques are limited to producing simple shapes and struggle to create functioning devices at sub-lithographic pitches, making it difficult to form Kelvin-testable structures at dense pitches like 10 nanometers.
Innovation Solution
A method involving the formation of a guide pattern on a substrate to direct self-assembly of block copolymers, where the guide pattern is configured to produce multiple pad regions and interconnected lines, with only one line being continuous, allowing for the creation of Kelvin-testable structures at sub-lithographic pitches through a combination of lithography and self-assembly processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional lithography techniques are used, then manufacturing simplicity is maintained, but pitch resolution is limited and cannot achieve sub-lithographic densities
Solution Approach 1:
The patterning process is segmented into two distinct stages: first forming guide patterns using conventional lithography, then using these guides to direct self-assembly of block copolymers to create the final sub-lithographic features. This segmentation allows each stage to operate at its optimal capability level.
Solution Approach 2:
Guide patterns serve as intermediaries between conventional lithography and the final sub-lithographic features. These guides direct the self-assembly process and enable pitch multiplication, acting as a mediating structure that translates larger lithographic features into finer final patterns.
2Manufacturing precision
If DSA techniques are used to achieve sub-lithographic pitch, then pitch resolution is improved, but the ability to form functional devices with isolated lines is lost
Solution Approach 1:
The guide pattern design creates local variations in the self-assembly template, resulting in different line continuity outcomes at different locations. Specifically, the guide geometry is engineered so that only odd-numbered lines remain continuous while even-numbered lines are interrupted, enabling selective isolation of specific lines for device formation.
Solution Approach 2:
The guide pattern introduces asymmetry in the periodic structure to break the uniform continuity of all lines. By designing guides with specific geometric asymmetries, the self-assembly process produces an asymmetric pattern where certain lines are continuous and others are interrupted, enabling functional device differentiation.
3Manufacturing precision
If multiple lithography levels are used to achieve dense patterning, then manufacturing precision is improved, but productivity decreases due to increased process steps
Solution Approach 1:
The method merges conventional lithography with self-assembly processes in a single integrated flow. The lithography step forms guides that automatically direct subsequent self-assembly, combining what would traditionally require multiple separate lithography and etching steps into a more efficient single-level process that achieves pitch multiplication.
Solution Approach 2:
The block copolymer system performs self-service by automatically organizing into the desired pattern based on the guide structure. The self-assembly process requires no additional lithography steps, masks, or complex alignment procedures, thereby maintaining high productivity while achieving sub-lithographic resolution.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables the formation of Kelvin-testable structures with lines at pitches from 10 nanometers to 75 nanometers, facilitating the isolation of specific lines within dense patterns, which is challenging with conventional techniques, and allows for high-throughput lithography with only two levels.
Implementation Method 1
The self-assembly material is annealed at a temperature and for a duration sufficient to cause the self-assembly material to undergo self-assembly to form a self-assembled pattern on the substrate
Implementation Method 2
The self-assembly material is annealed at a temperature and for a duration sufficient to cause the self-assembly material to undergo self-assembly
Data Source
AI summary
In one aspect, a DSA-based method for forming a Kelvin-testable structure includes the following steps. A guide pattern is formed on a substrate which defines i) multiple pad regions of the Kelvin-testable structure and ii) a region interconnecting two of the pad regions on the substrate. A self-assembly material is deposited onto the substrate and is annealed at a temperature/duration sufficient to cause it to undergo self-assembly to form a self-assembled pattern on the substrate, wherein the self-assembly is directed by the guide pattern such that the self-assembled material in the region interconnecting the two pad regions forms multiple straight lines. A pattern of the self-assembled material is transferred to the substrate forming multiple lines in the substrate, wherein the pattern of the self-assembled material is configured such that only a given one of the lines is a continuous line between the two pad regions on the substrate.