DSA Line Pattern Formation via Selective Region Processing
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional lithography techniques face limitations in fabricating microminiaturized semiconductor devices due to increased costs and decreased throughput, necessitating the use of directed self-assembly (DSA) materials for forming high-dimensional accuracy patterns.
Innovation Solution
A method involving a substrate with distinct regions, where a DSA material layer is formed and then processed through annealing to create alternating stripe structures, with the direction of the DSA material layer being confined by patterning and assisted by sacrificial or hard mask layers to form line patterns with fine pitch.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional lithography techniques (ArF immersion, EUV) are used to fabricate microminiaturized semiconductor devices, then pattern refinement capability is maintained, but manufacturing cost increases and throughput decreases
Solution Approach 1:
The fabrication process is divided into two distinct stages: first forming mandrels with conventional lithography, then using DSA to self-assemble the final fine-pitch patterns. This segmentation allows each process to operate in its optimal regime, avoiding the need to push conventional lithography beyond its capabilities while maintaining high throughput
Solution Approach 2:
The DSA material layer performs self-assembly through spontaneous micellization and phase separation, automatically forming the desired nanoscale patterns without requiring additional lithographic steps. This self-organizing behavior eliminates the need for complex multi-step lithography processes, thereby increasing throughput while maintaining pattern precision
2Manufacturing precision
If conventional lithography techniques are used to fabricate microminiaturized semiconductor devices, then pattern refinement capability is maintained, but manufacturing cost increases
Solution Approach 1:
The invention changes the fundamental parameter from using light-based lithography resolution limits to using thermodynamic self-assembly length scales. By controlling the DSA material's micellization behavior and annealing conditions, precise nanoscale patterns are formed through material physics rather than optical diffraction limits, reducing manufacturing complexity and cost
3Area of stationary object
If DSA material layer is formed covering both first and second regions, then complete coverage is achieved, but pattern formation in unwanted regions occurs
Solution Approach 1:
The patent applies different properties to different regions: the first region maintains the DSA material layer with annealing capability for pattern formation, while the second region has the DSA material layer removed or hardened to prevent pattern formation. This local differentiation allows selective pattern formation only where desired while maintaining complete initial coverage
4Stability of the object's composition
If annealing process is applied to the entire DSA material layer, then phase separation occurs uniformly, but pattern formation occurs in regions where it is not desired
Solution Approach 1:
The patent performs preliminary removal or hardening of the DSA material layer in the second region before applying the annealing process. This preliminary action prevents phase separation and pattern formation in unwanted areas, while the first region undergoes annealing to achieve uniform phase separation and desired pattern formation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables the formation of diverse line patterns with high etching selectivity and regularity, improving the efficiency and accuracy of the patterning process while reducing costs and increasing throughput.
Implementation Method 1
Especially for technologies using microphase separation of macromolecule block copolymer, periodic structures up to several hundred nanometers (nm) of various shapes may be formed with a simple coating and annealing process
Implementation Method 2
an annealing process is performed to enable only the DSA material layer in the first region and to form a plurality of first stripe structures and a plurality of second stripe structures arranged alternately in a first direction
Implementation Method 3
Since directed self-assembly is generated by spontaneous energy stability, this enables the formation of patterns with high dimensional accuracy
Data Source
AI summary
A method of forming a line pattern including following steps. First of all, a substrate having a first region and a second region is provided. Next, a directed self-assembly (DSA) material layer is formed on the substrate, covering the first region and the second region. Then, the DSA material layer in the second region is removed, to form a patterned DSA material layer. After these, an annealing process is performed to enable only the DSA material layer in the first region and to form a plurality of first stripe structures and a plurality of second stripe structures arranged alternately in a first direction.