DSA Line Patterns in Substrates via Block Copolymer Templates
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Solution Overview
Problem
Conventional photolithography methods limit the increase in integrated circuitry density due to minimum attainable feature size constraints, necessitating the development of alternative techniques for forming line patterns in substrates.
Innovation Solution
The method involves using directed self-assembly (DSA) of materials like block copolymers to form longitudinally spaced projecting features as templates, which are then used to create DSA lines that can serve as masks for processing substrate materials, allowing for the formation of line patterns beyond sub-lithographic scales.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If photolithography is used to form line patterns, then the manufacturing process is simple and well-established, but the minimum feature size is limited by the wavelength of radiation used
Solution Approach 1:
The patent segments the pattern formation process into multiple steps: first forming guide line patterns using photolithography, then using these guides to direct self-assembly of block copolymers to create additional lines. This segmentation allows the final pattern density to exceed the limits of single-step photolithography by dividing the task between conventional lithography and self-assembly processes
Solution Approach 2:
The patent uses block copolymers as an intermediary material that self-assembles into micelle structures between the photolithographically formed guide lines. These copolymers act as a bridge between the lithographic pattern and the final high-density line pattern, enabling feature sizes smaller than the lithographic resolution limit
2Manufacturing precision
If pitch multiplication techniques are used to increase integration density, then feature size limits are overcome, but the manufacturing process becomes more complex
Solution Approach 1:
The patent performs preliminary action by first forming guide line patterns using photolithography before initiating the self-assembly process. These pre-formed guides establish the spatial framework that directs where block copolymer micelles will self-assemble, ensuring the final pattern achieves the desired density and alignment without requiring complex real-time control
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the creation of more densely packed line patterns, enhancing integration density by allowing for feature sizes smaller than those achievable with traditional photolithography, thereby overcoming the limitations of conventional fabrication techniques.
Implementation Method 1
using directed self-assembly (DSA) of materials like block copolymers to form longitudinally spaced projecting features as templates
Data Source
AI summary
A method including forming a line pattern in a substrate includes using a plurality of longitudinally spaced projecting features formed along respective guide lines as a template in forming a plurality of directed self-assembled (DSA) lines that individually comprise at least one of (a): the spaced projecting features and DSA material longitudinally there-between, and (b): are laterally between and laterally spaced from immediately adjacent of the guide lines. Substrate material elevationally inward of and laterally between the DSA lines may be processed using the DSA lines as a mask.