Directed Self-Assembling Film Pattern Transfer via Metal Intermediary
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Solution Overview
Problem
Current pattern-forming methods in semiconductor manufacturing face challenges in achieving finer and more rectangular substrate patterns due to limitations in etching selectivity and mask transfer efficiency, particularly in multilayer resist processes.
Innovation Solution
A pattern-forming method involving the sequential steps of providing a metal-containing film and a directed self-assembling film on a substrate, where the directed self-assembling film is used as a mask for etching the metal-containing film and substrate, allowing for finer and more rectangular pattern formation through controlled phase separation and etching processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a multilayer resist process is used to reduce processing size, then higher degree of integration is achieved, but etching selectivity ratio limitations prevent finer and more rectangular patterns
Solution Approach 1:
A metal-containing film is introduced as an intermediary layer between the resist film and the substrate. This metal-containing film serves as an etching-resistant mask that enables precise pattern transfer while maintaining high etching selectivity, thereby achieving finer and more rectangular patterns without compromising etching reliability
Solution Approach 2:
The patent employs a composite structure consisting of multiple layers including resist film, metal-containing film, and inorganic film. This composite material approach allows optimization of each layer's properties - the resist film for pattern definition, the metal-containing film for etching resistance, and the inorganic film for substrate protection - thereby simultaneously achieving high pattern precision and etching selectivity
2Manufacturing precision
If conventional resist patterns are used for mask transfer, then pattern transfer is achieved, but mask collapse occurs during etching process
Solution Approach 1:
The patent changes the material parameter of the mask from conventional organic resist to metal-containing film. This parameter change fundamentally alters the mechanical and thermal properties of the mask, providing superior structural stability during etching while maintaining precise pattern transfer capability, thereby preventing mask collapse
Solution Approach 2:
The mask function is segmented into two separate components: the resist film for pattern definition and the metal-containing film for structural support during etching. This segmentation allows each component to optimize its specific function - the resist film provides precise pattern formation while the metal-containing film provides mechanical strength to prevent collapse during the etching process
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the formation of finer and superior rectangularity in substrate patterns, suitable for advanced electronic devices like semiconductors and liquid crystal devices, by improving etching selectivity and preventing mask collapse during pattern transfer.
Implementation Method 1
providing a directed self-assembling film directly or indirectly on the metal-containing film such that a plurality of phases of the directed self-assembling film is formed
Data Source
AI summary
A pattern-forming method includes providing a metal-containing film directly or indirectly on a substrate. A directed self-assembling film is provided directly or indirectly on the metal-containing film such that a plurality of phases of the directed self-assembling film is formed. At least a part of the plurality of phases of the directed self-assembling film is removed such that a pattern of the directed self-assembling film is formed. The metal-containing film and the substrate are sequentially etched using the pattern of the directed self-assembling film as a mask.