Directed Self-Assembly Polymers for Fine Lithography Patterns
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Solution Overview
Problem
Current pattern formation methods in lithography for electronic devices, such as semiconductor and liquid crystal devices, face challenges in achieving finer patterns due to limitations in existing directed self-assembly techniques, particularly in forming patterns without silicon atoms in the main chain of polymers.
Innovation Solution
A directed self-assembly composition comprising two or more polymers without silicon atoms in their main chains, where at least one polymer has a heteroatom-containing group bound to the polymerizing end, facilitating phase separation and enabling the formation of finer patterns through a pattern-forming method involving the formation and partial removal of a self-assembled film.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional directed self-assembly methods using block copolymers are employed, then pattern formation can be achieved, but the pattern size and pitch cannot be sufficiently miniaturized for advanced lithography
Solution Approach 1:
The patent changes the chemical composition parameters of the polymer system by excluding silicon atoms from the main chain and incorporating heteroatom-containing groups at polymerizing ends. This parameter change enables the formation of finer patterns with smaller pitch by modifying the self-assembly behavior and interaction characteristics of the polymer components, directly addressing the limitation of conventional block copolymer methods in achieving sufficient miniaturization.
Solution Approach 2:
The invention employs a composite material system consisting of multiple polymers without silicon in the main chain, where at least one polymer contains heteroatom-containing groups. This composite approach creates new self-assembly properties that enable finer pattern formation, combining the advantages of different polymer materials to achieve pattern sizes and pitches suitable for advanced lithography applications.
2Manufacturing precision
If polymers with silicon atoms in the main chain are used for directed self-assembly, then phase separation can occur, but the resulting patterns are not fine enough for next-generation devices
Solution Approach 1:
The patent applies parameter changes by fundamentally altering the chemical composition constraints - specifically excluding silicon atoms from polymer main chains and requiring heteroatom-containing groups at polymerizing ends. This parameter modification enables the system to achieve finer pattern pitch while maintaining ease of manufacture through a defined class of polymers that exhibit suitable self-assembly characteristics for next-generation device fabrication.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the creation of sufficiently fine pattern sizes and pitches, suitable for advanced microfabrication in electronic devices, by promoting phase separation and precise pattern formation in lithography processes.
Implementation Method 1
a phase separation structure induced by the so-called directed self-assembly which leads to spontaneous formation of an ordered pattern
Data Source
AI summary
A directed self-assembly composition for pattern formation, includes two or more kinds of polymers. The two or more kinds of polymers each do not have a silicon atom in a main chain thereof. At least one of the two or more kinds of polymers has a group binding to the polymerizing end of the main chain and having a hetero atom.