Deep Trench Isolation Seal Ring for Crack Prevention
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Solution Overview
Problem
Existing semiconductor devices face challenges in protecting the active region from damage or crack propagation during the dicing or singulation process, as conventional seal rings may not effectively prevent damage from spreading into the active region.
Innovation Solution
The implementation of a semiconductor device with a deep trench isolation (DTI) structure filled with dielectric material, which is extended into the semiconductor substrate and surrounded by a seal ring region, provides enhanced protection by creating a buffer zone that separates the seal ring from the DTI structure, thereby preventing crack propagation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If the seal ring is placed close to the edge for maximum protection, then it provides better coverage, but cracks can still propagate through to the active region
Solution Approach 1:
The solution adds the vertical dimension to the protection mechanism. Instead of relying solely on the horizontal placement of the seal ring near the edge, the DTI structure extends vertically deep into the substrate, creating buffer zones at multiple depths. This multi-dimensional approach maintains wide coverage while effectively blocking crack propagation paths.
Solution Approach 2:
The DTI structure acts as an intermediary buffer zone between the seal ring and the active region. It absorbs and deflects crack energy before it can reach the active region, providing an additional layer of protection that bridges the gap between the seal ring's coverage area and the vulnerable active region.
2Reliability
If a deeper DTI structure is implemented to prevent crack propagation, then crack protection is improved, but the device complexity and manufacturing difficulty increase
Solution Approach 1:
The DTI structure is combined with the existing seal ring structure to form an integrated protection system. Both structures work together synergistically, with the seal ring providing peripheral protection and the DTI providing deep substrate protection. This merging allows the system to achieve superior crack prevention without proportionally increasing complexity, as the components complement rather than compete with each other.
Solution Approach 2:
The DTI structure is formed during the manufacturing process before dicing, creating pre-established buffer zones that are ready to intercept cracks. This preliminary action ensures that the protection mechanism is in place before any damage can occur, allowing for standardized manufacturing processes rather than requiring complex post-processing or assembly steps.
Data Source
AI summary
The present disclosure provides a semiconductor device. The semiconductor device includes a semiconductor substrate and a first deep trench isolation (DTI) structure filled with a dielectric material formed on the semiconductor substrate. The first DTI structure is disposed in the first seal ring region and is extended into the semiconductor substrate. The semiconductor substrate has a pixel array region and a first seal ring region. The first seal ring region is proximate to an edge of the semiconductor substrate and surrounds the pixel array region. The first DTI structure is formed in the first seal ring region and surrounds the pixel array region.