Diode-String Triggered SCR for DRAM Leakage Reduction
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Solution Overview
Problem
Traditional electro-static protection circuits for integrated circuits face challenges such as electric leakage, particularly in advanced semiconductor manufacturing where the design window for Electro-Static Discharge (ESD) protection is smaller, and conventional Silicon Controlled Rectifier (SCR) devices have high trigger voltage and are prone to latch-up, making them unsuitable for Dynamic Random Access Memory (DRAM) products.
Innovation Solution
An electro-static protection circuit with a control circuit that outputs high-level signals to trigger electro-static current discharge when static electricity is detected and low-level signals to reduce leakage current when it is not present, utilizing a diode-string-triggered SCR (DTSCR) with a low trigger voltage and holding voltage greater than the power supply voltage to avoid latch-up, specifically designed for DRAM chips.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If traditional SCR devices are used for electro-static protection, then electro-static discharge protection is provided, but the trigger voltage is high and latch-up occurs making them unsuitable for low voltage DRAM products
Solution Approach 1:
The protection circuit is segmented into multiple components: diode string for voltage division and triggering, SCR for current discharge, and control circuit for selective activation. This segmentation allows each component to operate within safe voltage ranges, enabling low-voltage DRAM protection without latch-up
Solution Approach 2:
The diode string acts as an intermediary between the static electricity source and the SCR trigger terminal. It divides the high voltage into multiple lower voltage segments, triggering the SCR at appropriate voltage levels while preventing direct high-voltage exposure that would cause latch-up in traditional SCR designs
2Reliability
If electro-static protection circuit is always active to provide protection, then electro-static discharge is protected, but leakage current increases
Solution Approach 1:
The control circuit dynamically adjusts the protection circuit state based on detected static electricity conditions. When no static electricity is detected, the control circuit deactivates the protection path, minimizing leakage current. When static electricity is detected, the protection circuit activates to discharge the electro-static current, thus dynamically optimizing between protection availability and energy loss
Solution Approach 2:
The control circuit implements feedback by continuously monitoring for static electricity presence and adjusting the protection circuit state accordingly. This feedback mechanism ensures the protection circuit is only active when needed, reducing unnecessary leakage current while maintaining protection readiness
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively performs electro-static protection on integrated circuits while minimizing leakage current, making it suitable for advanced manufacturing processes and reducing the risk of latch-up, particularly for DRAM chips with low operating voltages.
Implementation Method 1
trigger the electro-static protection circuit to discharge an electro-static current
Implementation Method 2
reduce a static leakage current of the electro-static protection circuit
Data Source
AI summary
An electro-static protection circuit and a chip are provided. The electro-static protection circuit includes an electro-static protection circuit and a control circuit. The electro-static protection circuit is located inside a protected chip and connected with the protected circuit. The control circuit is connected with the electro-static protection circuit, and is configured to output a high-level signal to the electro-static protection circuit to trigger the electro-static protection circuit to discharge an electro-static current when static electricity is generated on the protected chip, and output a low-level signal to the electro-static protection circuit to reduce a static leakage current of the electro-static protection circuit when the static electricity is not generated on the protected chip.