Dual-Active-Layer Drive Substrate for Simpler TFT Fabrication
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Solution Overview
Problem
The manufacturing process of double-gate and double-active-layer thin film transistors for Mini/Micro-LED displays is complicated, particularly due to the use of high-mobility materials like IGTO and IGZTO, which hinders efficient production.
Innovation Solution
A drive substrate architecture is developed with a shared gate and dual active layers, utilizing a single conductorization process to form conductor portions, and incorporating a third electrode as a mask to reduce manufacturing steps and improve mobility.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If double-gate and double-active-layer thin film transistors are manufactured using high-mobility materials like IGTO and IGZTO, then mobility is improved, but manufacturing complexity increases
Solution Approach 1:
The active layer is divided into two separate layers (first active layer and second active layer) positioned at different heights, with each layer having its own conductor portions. This segmentation allows independent optimization of each layer's properties and simplifies the overall manufacturing process by enabling modular fabrication approaches.
Solution Approach 2:
The patent introduces a vertical dimension to the transistor structure by stacking two active layers at different heights (first height and second height). This three-dimensional arrangement enables dual-gate control and improves mobility without requiring complex in-plane processing, thus resolving the contradiction between performance improvement and manufacturing complexity.
2Manufacturing precision
If conventional manufacturing processes are used for double-gate transistors, then manufacturing precision can be maintained, but productivity decreases
Solution Approach 1:
The patent combines multiple functions into shared structures: the first gate and second gate share common conductor portions (first conductor portion and second conductor portion) that also serve as source/drain electrodes. This merging reduces the number of separate manufacturing steps while maintaining precise structural relationships, thereby improving productivity without sacrificing manufacturing precision.
Solution Approach 2:
The conductor portions serve multiple functions simultaneously: they act as gates (first gate, second gate), source/drain electrodes, and interconnect elements. This multi-functionality reduces the number of separate components that need to be manufactured and assembled, significantly improving production efficiency while maintaining structural precision through unified fabrication processes.
Data Source
AI summary
A drive substrate comprising: a substrate; a first active layer disposed on the substrate; a first insulating layer disposed on the first active layer; a first gate disposed on the first insulating layer; a second insulating layer disposed on the first gate; a second active layer disposed on the second insulating layer; a first electrode and a second electrode disposed on the substrate; a third insulating layer disposed on the first electrode and the second electrode; a third electrode disposed on the third insulating layer.