Dual Booster Voltage Generator for Nonvolatile Memory Stability
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Solution Overview
Problem
Nonvolatile memory devices face reliability issues due to noise generated by charge pumps used for high voltage generation, which affects the stability of write operations.
Innovation Solution
A voltage generator system comprising a first booster and a second booster, where the second high voltage is used as a drive voltage for the first booster, and a comparator controls the boosting operation based on feedback voltage to stabilize and improve the reliability of the write voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If a charge pump is used to generate high voltage for write operations, then the required high voltage is provided, but noise is generated which deteriorates the reliability of write operations
Solution Approach 1:
The voltage generator is divided into two separate boosters: a first booster that generates a first high voltage and a second booster that generates a second high voltage. The first booster includes a comparator that controls the boosting operation with reference to feedback voltage, providing stable write voltage with minimal noise, while the second booster provides additional high voltage support without interfering with the noise-sensitive write operations.
Solution Approach 2:
A comparator is introduced as an intermediary component in the first booster to control the boosting operation. The comparator compares feedback voltage with a reference voltage and adjusts the boosting operation accordingly, acting as a mediator that stabilizes the high voltage generation process and reduces noise, thereby improving write operation reliability.
2Power
If a charge pump generates large current to provide high voltage, then the voltage requirement is met, but noise is produced that affects write operation stability
Solution Approach 1:
The system segments the high voltage generation into two distinct pathways: the first booster generates high voltage with minimal noise through comparator-controlled feedback, while the second booster handles additional power requirements. This segmentation prevents noise generation during critical write operations while still meeting the high voltage requirements.
Solution Approach 2:
The first booster implements a feedback mechanism where a portion of the generated high voltage is fed back to the comparator. The comparator continuously monitors the feedback voltage and adjusts the boosting operation to maintain stable output, thereby minimizing voltage ripple and noise while ensuring consistent high voltage supply for write operations.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the stability and reliability of write operations in nonvolatile memory devices by minimizing voltage ripple and improving the sensitivity of feedback detection.
Implementation Method 1
a comparator that controls a boosting operation with reference to a fed back version of the first high voltage
Data Source
AI summary
A voltage generator comprises a first booster that generates a first high voltage, and a second booster that generates a second high voltage by boosting an external voltage. The first booster comprises a comparator that controls a boosting operation with reference to the fed back first high voltage and uses the second high voltage as a drive voltage.