Dual-Chamber Plasma Etching for Fast, Low-Damage Substrate Processing
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Solution Overview
Problem
Existing etching processes using plasma cause physical and electrical damages to the substrate due to high-energy electrons and ions, leading to prolonged process times and potential structural deformation of the etch target material.
Innovation Solution
An etching apparatus and method utilizing a dual-chamber system with a first chamber for high-density gas plasma and a second chamber for ultra-low electron temperature plasma, where grids control electron and ion passage, allowing for selective acceleration and adsorption of radicals without damaging the substrate, thereby omitting the purge process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If high-density gas plasma is used for etching, then etching speed is improved, but physical and electrical damages occur to the substrate
Solution Approach 1:
The etching process is segmented into two distinct chambers: the first chamber generates high-density gas plasma for rapid etching, while the second chamber provides ultra-low electron temperature plasma for gentle radical adsorption. This spatial segmentation allows each chamber to perform its specialized function without compromising the substrate, resolving the contradiction between etching speed and substrate damage.
Solution Approach 2:
The grids positioned between the two chambers act as intermediaries that selectively filter plasma components. They allow high-energy electrons to pass through for efficient etching while blocking low-energy electrons and ions that would cause substrate damage. This intermediary structure enables the system to achieve fast etching rates while protecting the substrate from harmful effects.
2Manufacturing precision
If a purge process is performed between adsorption and desorption processes, then process quality is improved, but process time increases
Solution Approach 1:
The dual-chamber configuration enables continuous useful action by maintaining plasma presence in both chambers simultaneously. The first chamber continuously generates high-density plasma for etching while the second chamber continuously provides ultra-low temperature plasma for radical adsorption, eliminating the need for interruptive purge processes and achieving both quality and time efficiency.
Solution Approach 2:
The system changes the electron temperature parameter between the two chambers: the first chamber operates with high electron temperature for aggressive etching, while the second chamber operates with ultra-low electron temperature for gentle radical adsorption. This parameter differentiation allows both processes to occur simultaneously without interference, eliminating the need for purge steps.
3Speed
If ultra-low electron temperature plasma is used, then adsorption process speed is improved, but ion bombardment energy is reduced
Solution Approach 1:
The system segments the plasma functions by spatial separation: the first chamber provides high-energy plasma for ion bombardment and physical sputtering, while the second chamber provides ultra-low temperature plasma optimized for rapid radical adsorption. This segmentation allows each chamber to optimize for its specific function without compromise.
Solution Approach 2:
The invention merges the benefits of high-energy plasma and low-temperature plasma by combining them in a single dual-chamber system. The grids facilitate the merging of high-energy electrons from the first chamber with the ultra-low temperature environment of the second chamber, achieving both fast adsorption and sufficient etching power.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method reduces process time and minimizes substrate damage by using ultra-low electron temperature plasma, enabling efficient etching without the need for a purge process, thus improving productivity and maintaining the integrity of the etch target material.
Implementation Method 1
the plurality of grids are configured to allow a potential difference between the plurality of grids to be lower than a potential of the ultra-low electron temperature plasma so that high-energy electrons pass through the grids, and low-energy electrons are blocked by the grids
Implementation Method 2
adsorbing radicals of the ultra-low electron temperature plasma to a surface of the substrate
Implementation Method 3
supplying ultra-low electron temperature plasma to the second chamber part
Implementation Method 4
applying a bias to the substrate to accelerate at least one of ions or electrons of the ultra-low electron temperature plasma so as to collide with the substrate
Implementation Method 5
accelerate at least one of ions or electrons of the ultra-low electron temperature plasma so as to collide with the substrate
Implementation Method 6
a first chamber part in which high-density gas plasma is generated
Data Source
AI summary
Provided is an etching method. The etching method includes loading a substrate into a process chamber, wherein the process chamber includes a first chamber part and a second chamber part, and the substrate is loaded into the second chamber part, supplying high-density gas plasma to the first chamber part, supplying ultra-low electron temperature plasma to the second chamber part using at least a portion of the high-density gas plasma, adsorbing radicals of the ultra-low electron temperature plasma to a surface of the substrate, and applying a bias to the substrate to accelerate at least one of ions or electrons of the ultra-low electron temperature plasma so as to collide with the substrate.