Dual-Channel Transistor Structure for Higher Drive Current
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Solution Overview
Problem
Conventional multi-gate transistors, such as FinFETs and MBC transistors, face challenges in achieving satisfactory drive current as they scale down, limiting their performance in high-density semiconductor integrated circuits.
Innovation Solution
The introduction of a dual-channel structure, where a first channel layer made of silicon or III-V semiconductors is combined with a second channel layer of two-dimensional materials like graphene or molybdenum disulfide, allowing for simultaneous activation and increasing the effective channel width and drive current.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional multi-gate transistor structures (FinFETs, MBC transistors) are used, then gate control is improved by increasing gate-channel coupling, but drive current becomes insufficient as devices scale down
Solution Approach 1:
The channel region is segmented into multiple independent channel portions (first channel portion and second channel portion) that are spatially separated but electrically connected through the gate structure. This segmentation allows each channel portion to contribute independently to drive current while maintaining effective gate control over each segment, thereby increasing total drive current without sacrificing gate control reliability.
Solution Approach 2:
The invention extends the channel structure from a single planar or fin-based channel to a multi-dimensional configuration with channel portions arranged in different spatial locations (e.g., different depths or lateral positions). This dimensional expansion allows the gate to control multiple channel pathways simultaneously, increasing drive current while maintaining coupling efficiency.
2Productivity
If geometry size is decreased to increase functional density, then production efficiency is improved and costs are lowered, but manufacturing complexity increases
Solution Approach 1:
The gate structure is designed to serve multiple functions simultaneously: it controls multiple channel portions, acts as an isolation barrier between channels, and provides electrical connection pathways. This multi-functionality reduces the need for additional separate structures, thereby managing manufacturing complexity while enabling scaled-down geometries for higher production efficiency.
Solution Approach 2:
Multiple channel portions and their associated gate structures are merged into a single integrated transistor unit that functions as one device. This merging approach allows the multi-channel structure to be manufactured using standard semiconductor fabrication processes without requiring separate processing steps for each channel, thus controlling manufacturing complexity while achieving high functional density.
3Device complexity
If conventional single-channel structures are used, then device simplicity is maintained, but effective channel width and drive current are limited
Solution Approach 1:
The channel is divided into multiple segments (first and second channel portions) that are connected through the gate structure. This segmentation increases the effective channel width and total drive current capability while maintaining a relatively simple overall device structure that can be integrated into conventional transistor architectures.
Data Source
AI summary
Semiconductor devices and methods of forming the same are provided. A semiconductor device according to the present disclosure includes a channel member including a first channel layer and a second channel layer over the first channel layer, and a gate structure over the channel member. The first channel layer includes silicon, germanium, a III-V semiconductor, or a II-VI semiconductor and the second channel layer includes a two-dimensional material.