Dual-Channel Semiconductor Assembly for Heat and Vertical Current Flow
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Solution Overview
Problem
Existing ceramic-based semiconductor assemblies struggle to effectively dissipate heat and facilitate vertical electricity transmission due to limitations in thermal conductivity and the difficulty in forming large-size vertically connecting elements, making them unsuitable for high power applications.
Innovation Solution
A semiconductor assembly with dual conduction channels is designed, featuring a top substrate and a base substrate with electrode connection plates and slugs, along with routing circuitries, to provide high current flow and efficient heat flux dissipation, utilizing materials with high thermal and electrical conductivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Stability of the object's composition
If ceramic materials are used for semiconductor chip interconnect base, then CTE matching is improved, but thermal conductivity and electrical conductivity are worsened
Solution Approach 1:
The interconnect base is segmented into multiple functional layers: a ceramic substrate layer for CTE matching, a thermally conductive layer for heat dissipation, and an electrically conductive layer for current flow. This segmentation allows each layer to optimize its specific function without compromising the others.
Solution Approach 2:
The invention uses a composite structure combining ceramic materials with thermally conductive and electrically conductive materials. The ceramic substrate provides mechanical stability and CTE matching, while the additional layers provide enhanced thermal and electrical conductivity, creating a multi-functional composite interconnect base.
2Stability of the object's composition
If ceramic materials are used for semiconductor chip interconnect base, then CTE matching is improved, but electrical conductivity for vertical current transmission is worsened
Solution Approach 1:
The interconnect base is segmented into multiple functional layers: a ceramic substrate layer for CTE matching, a thermally conductive layer for heat dissipation, and an electrically conductive layer for current flow. This segmentation allows each layer to optimize its specific function without compromising the others.
Solution Approach 2:
The invention uses a composite structure combining ceramic materials with thermally conductive and electrically conductive materials. The ceramic substrate provides mechanical stability and CTE matching, while the additional layers provide enhanced thermal and electrical conductivity, creating a multi-functional composite interconnect base.
3Reliability
If large-size vertically connecting elements are formed in ceramic, then electrical conductivity is improved, but manufacturing complexity increases
Solution Approach 1:
The interconnect base is segmented into multiple functional layers: a ceramic substrate layer for CTE matching, a thermally conductive layer for heat dissipation, and an electrically conductive layer for current flow. This segmentation allows each layer to optimize its specific function without compromising the others.
Solution Approach 2:
Different regions of the interconnect base have different properties optimized for their specific functions. The ceramic substrate provides mechanical stability, while the electrically conductive layer provides high conductivity paths. This local optimization allows large-size vertically connecting elements to be formed in the conductive layer without compromising the overall structural integrity provided by the ceramic.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The assembly achieves improved thermal and electrical performance by ensuring high current flow and effective heat dissipation, suitable for high power applications.
Implementation Method 1
The electrode connection plate and the electrode connection slug can offer high current flow channels and also ensure high heat flux dissipation for the semiconductor device
Implementation Method 2
The electrode connection plate and the electrode connection slug can offer high current flow channels
Data Source
AI summary
A semiconductor assembly includes a top substrate and a base substrate attached to top and bottom electrode layers of a semiconductor device, respectively. The top substrate includes an electrode connection plate thermally conductible with and electrically connected to the top electrode layer of the semiconductor device and vertical posts protruding from the electrode connection plate and electrically connected to the base substrate. The base substrate includes an electrode connection slug embedded in a dielectric layer and thermally conductible with and electrically connected to the bottom electrode layer of the semiconductor device and first and second routing circuitries deposited on two opposite surfaces of the dielectric layer, respectively, and electrically connected to each other.