Dual-Channel Semiconductor Device for Short-Channel Effect Control
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Solution Overview
Problem
In semiconductor devices with small sizes, short-channel effects and significant power dissipation can negatively impact performance due to thick fin structures, which existing technologies have not adequately addressed.
Innovation Solution
A semiconductor device design featuring a gate electrode, insulating layer, and two channel members with different semiconductor materials, where the second channel member is thinner (2 nm to 10 nm) and strategically positioned to minimize short-channel effects and optimize band gap size, and an oxide layer is used to optimize Schottky barriers and contact resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If fin structures with thick semiconductor layers are used, then device size can be reduced, but short-channel effects and power dissipation increase
Solution Approach 1:
The channel is divided into two distinct members: a first channel member made of semiconductor material and a second channel member made of different semiconductor material with larger band gap. This segmentation allows each layer to contribute differently to device performance, with the second channel member specifically addressing short-channel effects while the first provides primary conduction
Solution Approach 2:
Different semiconductor materials are used for the first and second channel members, creating local variations in electrical properties. The second channel member has specifically tailored properties (thinner thickness, different material composition) to locally address the short-channel effect problem in critical regions
2Volume of moving object
If fin structures with thick semiconductor layers are used, then device size can be reduced, but power dissipation increases
Solution Approach 1:
The channel is divided into two distinct members: a first channel member made of semiconductor material and a second channel member made of different semiconductor material with larger band gap. This segmentation allows each layer to contribute differently to device performance, with the second channel member specifically addressing short-channel effects while the first provides primary conduction
Solution Approach 2:
Different semiconductor materials are used for the first and second channel members, creating local variations in electrical properties. The second channel member has specifically tailored properties (thinner thickness, different material composition) to locally address the short-channel effect problem in critical regions
3Object-affected harmful factors
If the second channel member is made thinner (2 nm to 10 nm), then short-channel effects are minimized, but manufacturing precision requirements increase
Solution Approach 1:
The thickness of the second channel member is precisely controlled within a specific range (2 nm to 10 nm) to optimize device performance. This parameter change directly addresses short-channel effects while the patent provides guidance on achieving the required manufacturing precision
Data Source
AI summary
A semiconductor device may include a gate electrode, an insulating layer, a first channel member, and a second channel member. The insulating layer may overlap the gate electrode. The first channel member may be positioned between the gate electrode and the insulating layer. The second channel member may be positioned between the gate electrode and the first channel member. A semiconductor material of the second channel member may be different from a semiconductor material of the first channel member.