Dual-Coil Plasma Chamber Control for Precise Semiconductor Etching
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Solution Overview
Problem
Existing plasma processing technologies lack temporal and spatial control over plasma generation within a plasma chamber, leading to inefficient semiconductor manufacturing processes.
Innovation Solution
A plasma processing apparatus with a dual-coil configuration and RF power sources of varying frequencies, controlled by a controller, to spatially and temporally manage plasma distribution within a plasma chamber.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a single RF power source is used to generate plasma in the plasma chamber, then the device complexity is reduced, but the temporal and spatial control precision of plasma distribution deteriorates
Solution Approach 1:
The plasma chamber is divided into multiple areas (first area with electrostatic chuck, second area with coils), and separate RF power sources are assigned to each area to enable independent plasma control in different spatial zones
Solution Approach 2:
The system uses variable frequency RF power sources that can dynamically adjust their operating parameters to achieve temporal control of plasma generation and modification in response to process requirements
2Manufacturing precision
If plasma is generated uniformly throughout the plasma chamber, then the device complexity is reduced, but the manufacturing precision of semiconductor devices deteriorates due to inability to control etch rates and profiles
Solution Approach 1:
Different regions of the plasma chamber are given different plasma properties through localized RF power application - the first area maintains plasma for general processing while the second area with coils provides enhanced plasma density for specific features requiring precise etch control
Solution Approach 2:
The plasma generation system is segmented into multiple independently controlled RF power sources, allowing different plasma conditions to be maintained in different spatial zones to achieve precise manufacturing outcomes
3Measurement precision
If multiple RF power sources with different frequencies are used to control plasma distribution, then the temporal and spatial control of plasma is improved, but the use of energy increases
Solution Approach 1:
Instead of applying full power uniformly across the entire chamber, the system applies RF power selectively to specific areas and at different frequency levels, using just enough energy to achieve the required plasma control for each process step
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enhances the efficiency of semiconductor processes by allowing precise control over plasma generation, improving etch rates and profiles, and ensuring uniform plasma distribution for deposition and cleaning.
Implementation Method 1
a first coil and a second coil arranged in the second area, wherein the first coil and the second coil are positioned in a same plane and the first coil surrounds the second coil
Implementation Method 2
a first radio frequency (RF) power source configured to transmit pieces of first RF power to the first area... a second RF power source configured to transmit second RF power to the second area of the plasma chamber
Implementation Method 3
an electrostatic chuck provided in the first area of the plasma chamber, and configured to support a wafer
Data Source
AI summary
A plasma processing apparatus includes: a plasma chamber including a first area and a second area; a first radio frequency (RF) power source transmitting pieces of first RF power to the first area; a second RF power source transmitting second RF power to the second area; a controller configured to control the first RF power source and the second RF power source; and a first coil and a second coil arranged in the second area, wherein the controller spatially controls plasma in the first and second areas by controlling a signal of a current applied to the first coil and a signal of a current applied to the second coil, and temporally controls the plasma in the first and second areas by controlling a signal of the first RF power transmitted from the first RF power source and a signal of the second RF power transmitted from the second RF power source.