Dual Compartment Semiconductor Package for IGBT and Diode Integration
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Solution Overview
Problem
Conventional approaches to packaging insulated-gate bipolar transistors (IGBT) and freewheeling diodes in high-power applications face issues such as movement-induced contact failure and increased inductance due to separate packages, or reduced reliability due to close proximity in co-packages, leading to higher resistance and lower current carrying capability.
Innovation Solution
A dual compartment semiconductor package with a conductive clip having separate compartments for the IGBT and diode, electrically and mechanically connected without bond wires, featuring a groove to prevent electrical contact and maintain separation, allowing for short lead lengths and low inductance connections.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If IGBT and diode are placed in a common package (co-package), then device integration is improved, but reliability deteriorates due to movement-induced contact failure and electrical shorting
Solution Approach 1:
The common package is segmented into two separate compartments by a partition wall, allowing IGBT and diode to be integrated in the same package while physically separated to prevent movement-induced contact failure and electrical shorting. Each compartment independently secures its device to the substrate.
2Reliability
If IGBT and diode are placed in separate packages, then reliability is improved by reducing movement risk, but inductance increases due to longer connection distances
Solution Approach 1:
Two separate packages are merged into a single dual-compartment package structure, maintaining the reliability benefits of separation while reducing the distance between devices. The partition wall allows both devices to be mounted on the same substrate, shortening connection paths and reducing inductance.
3Ease of manufacture
If bond wires are used as interconnects, then device connection is simplified, but current carrying capability decreases and resistance increases
Solution Approach 1:
Bond wire mechanical connections are replaced with direct electrical contact through conductive paste or solder joints between device terminals and substrate contact pads. This substitution eliminates bond wire limitations, providing higher current carrying capability and lower resistance while maintaining manufacturing feasibility.
Data Source
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AI summary
According to an exemplary embodiment, a dual compartment semiconductor package includes a conductive clip having first and second compartments. The first compartment is electrically and mechanically connected to a top surface of the first die. The second compartment electrically and mechanically connected to a top surface of a second die. The dual compartment semiconductor package also includes a groove formed between the first and second compartments, the groove preventing contact between the first and second dies. The dual compartment package electrically connects the top surface of the first die to the top surface of the second die. The first die can include an insulated-gate bipolar transistor (IGBT) and the second die can include a diode. A temperature sensor can be situated adjacent to, over, or within the groove for measuring a temperature of the dual compartment semiconductor package.