Oxide Semiconductor Channel Structure With Dual-Composition Contact Region
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Solution Overview
Problem
The existing semiconductor devices face challenges in reducing contact resistance between the channel structure and conductive contact patterns, which affects the reliability and performance of transistors using oxide semiconductor materials.
Innovation Solution
The semiconductor device incorporates a channel structure with a main channel portion made of an oxide semiconductor layer and a channel contact portion with a different composition, strategically positioned between the main channel portion and the conductive contact pattern to reduce contact resistance, along with a gate dielectric film and conductive contact patterns electrically connected to the channel structure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-generated harmful factors
If an oxide semiconductor layer is used for the channel structure, then leakage current is reduced, but contact resistance between the channel structure and conductive contact pattern increases
Solution Approach 1:
The channel structure is designed with different compositions in different regions: the main channel portion uses one oxide semiconductor composition while the channel contact portion uses a different oxide semiconductor composition. This local differentiation allows the main channel to maintain low leakage current while the contact portion achieves lower contact resistance with the conductive contact pattern.
Solution Approach 2:
The channel structure employs composite oxide semiconductor materials with different compositions in different portions. The main channel portion and channel contact portion use distinct oxide semiconductor compositions, creating a composite structure that optimizes both leakage current reduction and contact resistance reduction simultaneously.
2Ease of manufacture
If a single composition oxide semiconductor layer is used throughout the channel structure, then manufacturing is simplified, but contact resistance increases
Solution Approach 1:
The channel structure is designed with different compositions in different regions: the main channel portion uses one oxide semiconductor composition while the channel contact portion uses a different oxide semiconductor composition. This local differentiation allows the main channel to maintain low leakage current while the contact portion achieves lower contact resistance with the conductive contact pattern.
Solution Approach 2:
The channel structure employs composite oxide semiconductor materials with different compositions in different portions. The main channel portion and channel contact portion use distinct oxide semiconductor compositions, creating a composite structure that optimizes both leakage current reduction and contact resistance reduction simultaneously.
Data Source
AI summary
A semiconductor device includes an upper conductive line on a substrate, a channel structure adjacent the upper conductive line, a gate dielectric film between the channel structure and the upper conductive line, and a conductive contact pattern electrically connected to the channel structure. The channel structure includes a main channel portion including an oxide semiconductor layer having a first composition, and a channel contact portion between the main channel portion and the conductive contact pattern. The channel contact portion is in contact with the conductive contact pattern and includes a material having a second composition that is different from the first composition.