Dual Cooling Wafer Table for Heating and Rapid Heat Dissipation
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing wafer placement tables are not suitable for efficiently dissipating heat from wafers after high-temperature processing.
Innovation Solution
A wafer placement table design incorporating a ceramic base with an electrostatic electrode and heater, a first cooling base with a refrigerant flow channel, and a second cooling base with a heat-transfer gas supply, allowing for independent control of refrigerant flow and heat dissipation to maintain or dissipate wafer temperature as needed.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If a single cooling base with refrigerant flow channel is used, then heat dissipation efficiency is improved, but the ability to maintain high temperature for processing is worsened
Solution Approach 1:
The cooling base is divided into two independent cooling bases (first and second cooling bases), each with its own refrigerant flow channel. This segmentation allows independent control of heat dissipation, enabling one cooling base to maintain high temperature while the other provides efficient cooling when needed.
Solution Approach 2:
The system dynamically switches between different cooling modes by controlling the refrigerant flow in the first and second cooling bases. The refrigerant flow channels are designed to be independently controllable, allowing the system to adapt between heat maintenance and heat dissipation states based on processing requirements.
2Loss of energy
If refrigerant flow is increased for better heat dissipation, then heat dissipation efficiency is improved, but the temperature control flexibility is worsened
Solution Approach 1:
The refrigerant cooling system is segmented into two independent cooling bases with separate refrigerant flow channels. This allows selective activation of cooling paths, providing flexible temperature control while maintaining high heat dissipation efficiency when both cooling bases are activated.
Solution Approach 2:
The system changes the operational parameters of the refrigerant flow channels, allowing independent control of flow rates and activation states for the first and second cooling bases. This parameter control enables the system to achieve both high heat dissipation and temperature control flexibility.
3Device complexity
If a simple single-layer cooling structure is used, then device complexity is reduced, but the thermal management capability is worsened
Solution Approach 1:
The cooling structure is segmented into two distinct cooling bases stacked vertically, each with its own refrigerant flow channel. This segmented design maintains relative structural simplicity while dramatically improving thermal management capability by enabling independent heat dissipation control from different zones.
Solution Approach 2:
The cooling structure transitions from a single-layer horizontal design to a two-layer vertical stacked configuration. This dimensional change allows heat dissipation from both the upper and lower surfaces of the wafer, enhancing thermal management capability while maintaining compact form factor.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables both high-temperature processing and efficient heat dissipation from wafers by strategically controlling refrigerant flow and heat-transfer gas supply, simplifying the structure and reducing thermal interference.
Implementation Method 1
heat of the wafer heated by energizing the heater electrode is drawn by the first cooling base close to the ceramic base
Implementation Method 2
heat of the wafer heated by energizing the heater electrode is drawn by the second cooling base far from the ceramic base
Implementation Method 3
Heat-transfer gas is supplied to the space layer when good thermal conduction between the first cooling base and the second cooling base needs to be obtained
Implementation Method 4
When the space layer is set to the vacuum state, it is possible to insulate heat between the first cooling base and the second cooling base
Implementation Method 5
heat of the wafer heated by energizing the heater electrode
Data Source
AI summary
A wafer placement table includes a ceramic base, a first cooling base, and a second cooling base. The ceramic base has a wafer placement surface and incorporates a wafer attracting electrode and a heater electrode. The first cooling base is bonded via a metal bonding layer to a surface of the ceramic base on a side opposite to the wafer placement surface and has a first refrigerant flow channel capable of switching between supply and stop of supply of first refrigerant. The second cooling base is attached via a space layer, capable of supplying heat-transfer gas, to a surface of the first cooling base on a side opposite to the metal bonding layer and has a second refrigerant flow channel capable of switching between supply and stop of supply of second refrigerant.