Dual-Reactive Interconnect Composition for Dual Damascene Adhesion
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Solution Overview
Problem
Existing dual damascene methods face challenges in achieving efficient and reliable bonding between upper and lower layer interconnects in semiconductor devices, particularly in forming conductive films within coupling holes for interconnects in interlayer insulating films.
Innovation Solution
A composition comprising a compound with specific reactive groups is used to form a covalent bond with both metal and silicon-oxygen containing surfaces, enabling improved adhesion and bonding through light-curable resins, combined with an imprint method to create a dual damascene structure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a dual damascene method is used to embed conductive films in coupling holes and interconnects simultaneously, then productivity is improved by forming both interconnect section and plug section with a single conductive film, but adhesion between upper and lower layer interconnects deteriorates due to insufficient bonding reliability
Solution Approach 1:
The patent introduces a specific compound as an intermediary substance between the metal-containing lower layer and the upper layer. This compound contains both a metal-chelating group (for bonding to metal surfaces) and a silane group (for bonding to silicon oxide surfaces), acting as a molecular bridge that simultaneously adheres to both layers and ensures reliable adhesion while maintaining the productivity benefits of the dual damascene method.
2Ease of manufacture
If conventional bonding methods are used for interconnect layers, then manufacturing process is simple, but adhesion strength deteriorates due to insufficient bonding reliability
Solution Approach 1:
The patent changes the chemical parameters of the bonding interface by introducing a compound with specific functional groups (metal-chelating group and silane group). This chemical parameter change enables strong covalent bonding between layers without complicating the manufacturing process, as the compound can be applied through existing deposition techniques and cured under standard conditions.
3Ease of manufacture
If porosity is not controlled in the interlayer structure, then manufacturing is easier, but device reliability deteriorates due to increased diffusion pathways
Solution Approach 1:
The patent employs a composite material system consisting of the interlayer insulating film and the bonding compound with dual functional groups. This composite structure creates a dense, low-porosity interface that acts as an effective diffusion barrier, preventing unwanted material migration while maintaining ease of manufacture through standard fabrication processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the adhesion and bonding between interconnect layers, reducing porosity and diffusion pathways, thereby improving the reliability and efficiency of semiconductor device manufacturing.
Implementation Method 1
a first reactive group bonded to the linking group and capable of forming a covalent bond with a metal atom
Implementation Method 2
a second reactive group bonded to the linking group and capable of forming a covalent bond with a compound including Si and O
Implementation Method 3
The polymerizable functional group includes at least one of a (meth)acryloyl group or a vinyl group
Data Source
AI summary
According to one embodiment, a composition including a compound is provided. The compound includes a linking group containing 2 to 18 carbon atoms, a polymerizable functional group bonded to the linking group, a first reactive group bonded to the linking group, and a second reactive group bonded to the linking group. The polymerizable functional group includes at least one of a (meth)acryloyl group or a vinyl group. The first reactive group includes at least one selected from the group consisting of a thiol group, a disulfide group, and a thiocyanate group. The second reactive group includes at least one selected from the group consisting of an alkoxysilane group, a chlorosilane group, and a hydroxyl group.


