Single-Chamber Dual Damascene Etching and Ashing Integration
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Solution Overview
Problem
Conventional semiconductor device manufacturing processes for dual damascene structures require multiple steps and equipment, leading to extended manufacturing times due to the need for etching, CVD, and ashing processes, as well as frequent wafer cleaning.
Innovation Solution
A method and apparatus that involve loading a semiconductor substrate with stacked trench and via hole resist masks into a processing chamber for sequential etching, ashing, and protective film formation, using plasma processing to form via holes and trenches, allowing for all necessary steps to be completed within the chamber before unloading, with high frequency powers applied to electrodes for efficient plasma processing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If multiple separate apparatuses (etching apparatus, CVD apparatus, ashing apparatus) are used for dual damascene process, then each process can be performed with dedicated equipment, but the manufacturing time is extended due to multiple loading/unloading operations and frequent wafer cleaning
Solution Approach 1:
The patent combines etching, CVD, and ashing functions into a single multi-functional processing chamber. The chamber can switch between different process modes (etching mode, CVD mode, ashing mode) without requiring wafer removal, thereby eliminating repeated loading/unloading operations and reducing manufacturing time while maintaining process quality through dedicated process modules.
Solution Approach 2:
The processing chamber is designed as a universal platform that can perform multiple functions (etching, CVD deposition, and ashing) within a single chamber. This multi-functionality allows continuous processing of the semiconductor wafer through different process stages without removal, addressing the time loss issue while preserving the reliability of each specific process.
2Ease of manufacture
If multiple separate apparatuses are used for dual damascene process, then each process step can be performed independently, but the device complexity and number of processing steps increase
Solution Approach 1:
The patent merges multiple separate processing apparatuses into a single integrated system. The processing chamber contains all necessary functional modules (etching module, CVD module, ashing module) that can operate independently while being coordinated through a unified control system, thereby reducing the number of physical apparatuses while maintaining process independence.
Solution Approach 2:
The processing chamber is segmented into distinct functional modules (etching module, CVD module, ashing module), each capable of independent operation. This segmentation allows each process step to be performed independently within the same chamber, maintaining process independence while reducing overall device complexity by consolidating multiple apparatuses into one.
3Reliability
If frequent wafer cleaning is performed during multiple process steps, then contamination is removed, but the manufacturing time is further extended
Solution Approach 1:
The patent combines the cleaning function with the main processing chamber, allowing wafer cleaning to be performed in-situ between process steps without removing the wafer. This integration eliminates the need for separate cleaning stations and reduces the time lost to cleaning operations while maintaining wafer cleanliness through controlled cleaning cycles.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly reduces the time required for manufacturing semiconductor devices by integrating multiple processes within a single chamber, enhancing processing efficiency and minimizing wafer handling and cleaning.
Implementation Method 1
forming a via hole by etching the insulating film with the use of the via hole resist mask; removing the via hole resist mask by an ashing process; forming on an underlayer of the insulating film a protective film having an organic material
Implementation Method 2
high frequency powers applied to electrodes for efficient plasma processing
Data Source
AI summary
In a method for manufacturing a semiconductor device having a dual damascene structure, a semiconductor substrate formed by stacking a trench mask and a via hole resist mask on an insulating film is loaded into a processing chamber, and a via hole is formed by etching the insulating film through the via hole resist mask. Then, the via hole resist mask is removed by an ashing process and a protective film is formed on an underlayer of the insulating film; Thereafter, a trench is formed by etching the insulating film through the trench mask, and the semiconductor substrate is unloaded from the processing chamber after the via hole forming step, the resist mask removing step, the protective film forming step and the trench forming step are completed in the processing chamber.