Dual Damascene Conductor Structure for Reliable Semiconductor Packaging
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional semiconductor packages face issues of excess cost, decreased reliability, and large package sizes, leading to suboptimal performance.
Innovation Solution
A method for manufacturing semiconductor devices involves creating a substrate with a dielectric layer and conductive traces and vias using a dual damascene process, where both the trace and via patterns are defined in a single dielectric layer without the need for a second dielectric layer, reducing process steps and increasing manufacturing speed.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a conventional multi-layer dielectric process is used, then manufacturing precision can be maintained, but device complexity and manufacturing cost increase
Solution Approach 1:
The patent combines the formation of via holes and conductor traces into a single dual damascene process step. Both the via pattern and trace pattern are defined simultaneously in the same dielectric layer, eliminating the need for separate processing steps. This merging approach maintains manufacturing precision while significantly reducing process complexity and the number of dielectric layers required.
2Strength
If traditional semiconductor packaging methods are used, then structural integrity can be maintained, but manufacturing cost increases and reliability decreases
Solution Approach 1:
The patent changes the geometric parameters of the conductor structure by forming arcuate vertices instead of sharp corners where traces meet vias. This curvature modification reduces stress concentration at critical junction points, thereby improving both structural integrity and package reliability while maintaining the overall strength of the device.
3Ease of manufacture
If conventional packaging processes are used, then manufacturing can be completed, but productivity is reduced due to excessive process steps
Solution Approach 1:
The patent performs preliminary patterning of both via holes and conductor traces simultaneously in a single dielectric layer before subsequent processing steps. By defining both patterns upfront in the dual damascene process, the manufacturing process is streamlined, reducing the total number of steps required and thereby increasing manufacturing productivity without sacrificing ease of manufacture.
Data Source
AI summary
In one example, an electronic device, comprises a substrate, comprising a first dielectric having a top surface and a bottom surface, and a first conductor in the first dielectric and comprising a first via and a first trace over the first via. The first trace comprises a first trace sidewall and a first trace base, and the first via comprises a first via sidewall. The first conductor comprises a first arcuate vertex between the first trace sidewall and the first trace base, and a second arcuate vertex between the first via sidewall and the first trace base, an electronic component over the top surface of the substrate, and an encapsulant over the top surface of the substrate and contacting a lateral side of the electronic component. Other examples and related methods are also disclosed herein.